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参数资料
| 型号： | APTM50AM24SC |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 150 A, 500 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 7/7页 |
| 文件大小： | 306K |
| 代理商： | APTM50AM24SC |
APTM50AM24SC
A
P
T
M
50A
M
24S
C
–
R
ev
1
J
une
,2004
APT website – http://www.advancedpower.com
7 – 7
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
n
c
e
(°
C
/W
)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
40
80
120
160
00.511.522.5
33.5
VF Forward Voltage (V)
I F
F
o
rw
a
rd
C
u
rr
e
nt
(
A
)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
200
400
600
800
1000
1200
1400
1600
200
300
400
500
600
700
800
VR Reverse Voltage (V)
I R
R
eve
rs
e
C
u
rr
en
t(
A
)
Capacitance vs.Reverse Voltage
0
500
1000
1500
2000
2500
3000
1
10
100
1000
VR Reverse Voltage
C
,C
ap
aci
ta
n
ce
(p
F
)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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