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参数资料
| 型号： | APTM50DDA10T3 |
| 元件分类： | JFETs |
| 英文描述： | 35 A, 500 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 4/6页 |
| 文件大小： | 321K |
| 代理商： | APTM50DDA10T3 |
APTM50DDA10T3
A
P
T
M
50D
D
A
10T
3–
R
ev1
D
ecem
ber
,2004
APT website – http://www.advancedpower.com
4 - 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
lI
m
p
e
d
a
n
ce
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
8V
0
20
40
60
80
100
120
140
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,
D
ra
in
C
u
rr
e
n
t(
A
)
VGS=10&15V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
20
40
60
80
100
120
012345678
VGS, Gate to Source Voltage (V)
I D
,
D
ra
in
C
u
rr
e
n
t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.90
0.95
1.00
1.05
1.10
1.15
1.20
0
20
406080
ID, Drain Current (A)
R
DS
(o
n
)
D
ra
in
t
o
S
o
u
rce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 18.5A
0
10
20
30
40
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,D
C
Dr
a
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
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|---|---|
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