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参数资料
| 型号： | APTM50DUM19 |
| 元件分类： | JFETs |
| 英文描述： | 163 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-7 |
| 文件页数： | 1/6页 |
| 文件大小： | 287K |
| 代理商： | APTM50DUM19 |
APTM50DUM19
A
PT
M
50D
U
M
19
–
R
ev
2
A
pr
il
,2004
APT website – http://www.advancedpower.com
1 – 6
D2
G1
S1
S
G2
D1
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
163
ID
Continuous Drain Current
Tc = 80°C
122
IDM
Pulsed Drain current
652
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
19
m
W
PD
Maximum Power Dissipation
Tc = 25°C
1136
W
IAR
Avalanche current (repetitive and non repetitive)
46
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 500V
RDSon = 19m
W max @ Tj = 25°C
ID = 163A @ Tc = 25°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Dual common source
MOSFET Power Module
相关PDF资料 |
PDF描述 |
|---|---|
| APTM50DUM19 | 163 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50DUM38T | 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50DUM38T | 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50UM19S | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM50UM19SG | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
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