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参数资料
| 型号： | APTM50DUM19 |
| 元件分类： | JFETs |
| 英文描述： | 163 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-7 |
| 文件页数： | 2/6页 |
| 文件大小： | 287K |
| 代理商： | APTM50DUM19 |
APTM50DUM19
A
PT
M
50D
U
M
19
–
R
ev
2
A
pr
il
,2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500A
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 81.5A
19
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
22.4
Coss
Output Capacitance
4.8
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.36
nF
Qg
Total gate Charge
492
Qgs
Gate – Source Charge
132
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 163A
260
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
87
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 163A
RG = 1
W
77
ns
Eon
Turn-on Switching Energy
u
3020
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 163A, RG = 1
2904
J
Eon
Turn-on Switching Energy
u
4964
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 163A, RG = 1
3384
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
163
IS
Continuous Source current
(Body diode)
Tc = 80°C
122
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 163A
1.3
V
dv/dt
Peak Diode Recovery
w
8
V/ns
trr
Reverse Recovery Time
IS = -163A, VR = 250V
diS/dt = 400A/s
680
ns
Qrr
Reverse Recovery Charge
IS = -163A, VR = 250V
diS/dt = 400A/s
57
C
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS
- 163A
di/dt
700A/s
VR
VDSS
Tj
150°C
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| APTM50DUM19 | 163 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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| APTM50UM19S | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM50UM19SG | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
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