参数资料
型号: ARA2000S23TR
厂商: ANADIGICS INC
元件分类: 放大器
英文描述: RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封装: SSOP-28
文件页数: 15/20页
文件大小: 254K
代理商: ARA2000S23TR
4
Data Sheet - Rev 2.1
07-2001
ARA2000
ELECTRICAL CHARACTERISTICS
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
I
N
U
)
4
2
,
1
2
,
9
,
4
,
2
s
n
i
p
(
y
l
p
u
S
g
o
l
a
n
A0
9
C
D
V
:
y
l
p
u
S
l
a
ti
g
i
D
CMOS
)
1
n
i
p
(0
6
C
D
V
)
3
2
,
6
s
n
i
p
(
2
g
V
,
1
g
V
s
l
o
rt
n
o
C
r
e
if
il
p
m
A5
-2
V
F
R
s
t
u
p
n
I
t
a
r
e
w
o
P
s
n
i
p
(
8
,
5 )
-0
6
+V
m
B
d
)
6
1
,
5
1
,
4
1
,
3
1
,
2
1
s
n
i
p
(
e
c
a
fr
e
t
n
I
l
a
ti
g
i
D5
.
0
-VCMOS
5
.
0
+V
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S5
5
-0
0
2
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C
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r
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t
a
r
e
p
m
e
T
g
n
ir
e
d
l
o
S-
0
6
2
0
C
e
m
i
T
g
n
ir
e
d
l
o
S-
5
c
e
S
Table 2: Absolute Minimum and Maximum Ratings
Table 3: Operating Ranges
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
V
:
y
l
p
u
S
r
e
if
il
p
m
A
DD
)
4
2
,
1
2
,
9
,
4
s
n
i
p
(5
.
45
7
C
D
V
:
y
l
p
u
S
r
o
t
a
u
n
e
tt
A
ATTN
)
2
n
i
p
(VDD 5
.
0
-5
7
C
D
V
:
y
l
p
u
S
l
a
ti
g
i
D
CMOS
)
1
n
i
p
(0
.
3-
5
.
5C
D
V
)
6
1
,
5
1
,
4
1
,
3
1
,
2
1
s
n
i
p
(
e
c
a
fr
e
t
n
I
l
a
ti
g
i
D0
-
VCMOS
V
)
3
2
,
6
s
n
i
p
(
2
g
V
,
1
g
V
s
l
o
rt
n
o
C
r
e
if
il
p
m
A5
-1
2
V
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C0
4
-5
25
8
0
C
Stresses in excess of the absolute ratings may cause permanent damage. Functional
operation is not implied under these conditions. Exposure to absolute ratings for
extended periods of time may adversely affect reliability.
The device may be operated safely over these conditions; however, parametric
performance is guaranteed only over the conditions defined in the electrical specifications.
Notes:
1. Pins 3, 5, 8, 10, 19, 20, 25 and 26 should be AC-coupled. No external DC bias should be
applied.
2. Pins 7 and 22 should be grounded or pulled to ground through a resistor. No external DC
bias should be applied.
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