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参数资料
| 型号： | ARF1500 |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CERAMIC PACKAGE-6 |
| 文件页数： | 1/4页 |
| 文件大小： | 128K |
| 代理商： | ARF1500 |
050-5965
Rev
C
9-2005
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
V
isolation
V
GS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
On State Drain Voltage 1 (I
D(ON) = 30A, VGS = 10V)
Zero Gate Voltage Drain Current (V
DS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Forward Transconductance (V
DS = 25V, ID = 30A)
RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)
Gate Threshold Voltage (V
DS = VGS, ID = 50mA)
MIN
TYP
MAX
500
6
7.5
100
1000
±400
6
7.5
2500
35
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
I
D
V
GS
P
D
T
J,TSTG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
Gate-Source Voltage
Total Device Dissipation @ T
C = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF1500
500
60
±30
1500
-55 to 200
300
UNIT
Volts
Amps
Volts
Watts
°C
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
125V
750W
40MHz
The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF
power generator and amplifier applications up to 40 MHz.
Specified 125 Volt, 27.12 MHz Characteristics:
Output Power = 750 Watts.
Gain = 17dB (Class C)
Efficiency > 75%
High Performance Power RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
ARF1500
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θCS
Characteristic (per package unless otherwise noted)
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.12
0.09
UNIT
°C/W
D
S
G
Volts
DS
S
GS
S
ARF1500
BeO
1525-xx
SS
S
G
D
APT Website - http://www.advancedpower.com
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相关代理商/技术参数 |
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|---|---|
| ARF1501 | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET RF N-CH 1000V 30A T1 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET 制造商:Microsemi 功能描述:Trans RF MOSFET N-CH 1000V 30A |
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| ARF1502 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE |
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| ARF1510 | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET RF N-CH 1000V 8A T1 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
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