- 您现在的位置：买卖IC网 > PDF目录36743 > ARF1519 HF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | ARF1519 |
| 元件分类： | 功率晶体管 |
| 英文描述： | HF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CERAMIC PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 129K |
| 代理商： | ARF1519 |
050-4935
Rev
A
5-2005
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
V
isolation
V
GS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 300A)
On State Drain Voltage 1 (I
D(ON) = 10A, VGS = 10V)
Zero Gate Voltage Drain Current (V
DS = 1000V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 800V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Forward Transconductance (V
DS = 15V, ID = 10A)
RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)
Gate Threshold Voltage (V
DS = VGS, ID = 6mA)
MIN
TYP
MAX
1000
57
300
3000
±600
314
2500
24
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
I
D
V
GS
P
D
T
J,TSTG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
Gate-Source Voltage
Total Device Dissipation @ T
C = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF1519
1000
20
±30
1350
-55 to 200
300
UNIT
Volts
Amps
Volts
Watts
°C
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
250V
750W
25MHz
The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF
power generator and amplifier applications up to 25 MHz.
Specified 250 Volt, 13.56 MHz Characteristics:
Output Power = 750 Watts.
Gain = 17dB (Class C)
Efficiency > 75%
High Performance Power RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
ARF1519
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θCS
Characteristic (per package unless otherwise noted)
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.13
0.09
UNIT
°C/W
D
S
G
Volts
APT Website - http://www.advancedpower.com
ARF1519
BeO
104T-100
相关PDF资料 |
PDF描述 |
|---|---|
| ARF445 | 6.5 A, 900 V, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| ARF444 | 6.5 A, 900 V, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| ARF446 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF447 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF446 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ARF1519G | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF1577 | 制造商:AMPHENOL 制造商全称:AMPHENOL 功能描述:RIGHT ANGLE PLUG JUMPER |
| ARF1578 | 制造商:AMPHENOL 制造商全称:AMPHENOL 功能描述:RIGHT ANGLE PLUG JUMPER |
| ARF1579 | 制造商:AMPHENOL 制造商全称:AMPHENOL 功能描述:AMC PCB JACK SURFACE MOUNT |
| ARF1579CT | 制造商:AMPHENOL 制造商全称:AMPHENOL 功能描述:AMC PCB JACK SURFACE MOUNT |
发布紧急采购，3分钟左右您将得到回复。