参数资料
型号: ARF1519
元件分类: 功率晶体管
英文描述: HF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: CERAMIC PACKAGE-2
文件页数: 3/4页
文件大小: 129K
代理商: ARF1519
050-4935
Rev
A
5-2005
ARF1519
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
Figure 5, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.2
0.1
0.05
0.01
0.005
0.001
0.0001
0.1
0.02
0.05
0.2
D=0.5
0.01
SINGLE PULSE
TC,CASETEMPERATURE(°C)
Figure 3, Typical Threshold Voltage vs Temperature
VDS,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
Figure 4, Typical Output Characteristics
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
I D
,DRAIN
CURRENT
(AMPERES)
V
GS(th)
,THRESHOLD
VOLTAGE
(NORMALIZED)
5.5V
4.5V
4V
5V
6V
50
45
40
35
30
25
20
15
10
5
0
6.5V
Table 1 - Typical Class AB Large Signal Impedance -- ARF1519
F (MHz)
Zin ()ZOL ()
Zin - Gate shunted with 25 IDQ = 100mA
ZOL - Conjugate of optimum load for 750 Watts
output at Vdd = 200V
2.0
13.5
10.6 -j 12.2
0.5 -j 2.7
31 -j 4.7
15.6 -j 16
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