参数资料
型号: ARF1519
元件分类: 功率晶体管
英文描述: HF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: CERAMIC PACKAGE-2
文件页数: 2/4页
文件大小: 129K
代理商: ARF1519
050-4935
Rev
A
5-2005
DYNAMIC CHARACTERISTICS
ARF1519
Symbol
C
iss
C
oss
C
rss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS = 0V
V
DS = 150V
f = 1 MHz
MIN
TYP
MAX
4600
5600
310
350
90
120
UNIT
pF
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
η
ψ
Test Conditions
f = 13.56MHz
V
GS = 0V
V
DD = 200V
Pout = 750W
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1
MIN
TYP
MAX
17
20
70
75
UNIT
dB
%
1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
CAPACITANCE
(pf)
VDS,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
20,000
10,000
1000
100
10
.1
1
10
100 200
Ciss
Coss
Crss
60
50
40
30
20
10
0
01
2
3
4
5
6
7
VGS,GATE-TO-SOURCEVOLTAGE(VOLTS)
Figure 2, Typical Transfer Characteristics
I D
,DRAIN
CURRENT
(AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = +125°C
TJ = +25°C
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