参数资料
型号: ARF1519
元件分类: 功率晶体管
英文描述: HF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: CERAMIC PACKAGE-2
文件页数: 4/4页
文件大小: 129K
代理商: ARF1519
050-4935
Rev
A
5-2005
ARF1519
BeO
104T
-100
1.000
.500
.150r
.500
.466
.750
1.500
1.250
.300
.200
.250
.005 .040
.125d
1
2
4
3
1 Drain
2 Source
3 Source
4 Gate
Thermal Considerations and Package
Mounting:
The rated 1350W power dissipation is only
available when the package mounting surface is
at 25
°C and the junction temperature is 200°C.
The thermal resistance between junctions and
case mounting surface is 0.12
°C/W. When instal-
led, an additional thermal impedance of 0.1
°C/W
between the package base and the mounting sur-
face is typical. Insure that the mounting surface
is smooth and flat. Thermal joint compound
must be used to reduce the effects of small sur-
face irregularities. The heatsink should incorpo-
rate a copper heat spreader to obtain best re-
sults. Use 4-40 or M3 screws torqued to 1.2 Nm.
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between
leads and mounting surface is beryllium oxide-
BeO. Beryllium oxide dust is toxic when in-
haled. Care must be taken during handling
and mounting to avoid damage to this area
These devices must never be thrown away
with general industrial or domestic waste.
D
S
G
13.56 MHz Test Amp
ARF1519
RF 12-04
J1
J2
T1
ARF151
9
BeO
104T
-100
Parts placement - Not to Scale.
ARF1519 -- 13.56 MHz Test Circuit
L1
Output
C8
C9
C7
C10
L3
C4
C5
C6
200V
L2
RF
Input
T1
R1
C1-C3 1nF X7R 100V smt
C4 2x 8.2 nF 1kV COG
C5 270pF x2 ATC 100C
C7-C10 8.2 nF 1kv COG
C11 390 + 27 pF ATC 100C
L1 2uH - 22t #24 enam. .312" dia.
L2 368 nH - 5t #12 .625" dia .5" l
L3 500nH 2t on 850u .5" bead
R1 2.2k 0.5W
T1 10:1t transformer
C1
C2
C3
DUT
相关PDF资料
PDF描述
ARF445 6.5 A, 900 V, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
ARF444 6.5 A, 900 V, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
ARF446 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
ARF447 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
ARF446 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
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