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参数资料
| 型号： | ARF1505 |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CERAMIC PACKAGE-6 |
| 文件页数： | 3/4页 |
| 文件大小： | 126K |
| 代理商： | ARF1505 |
050-4922
Rev
C
6-2005
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between
leads and mounting surface is beryllium oxide,
BeO. Beryllium oxide dust is toxic when in-
haled. Care must be taken during handling
and mounting to avoid damage to this area .
These devices must never be thrown away
with general industrial or domestic waste.
Thermal Considerations and Package
Mounting:
The rated 1500W power dissipation is only avail-
able when the package mounting surface is at
25
°C and the junction temperature is 200°C. The
thermal resistance between junctions and case
mounting surface is 0.12
°C/W. When installed, an
additional thermal impedance of 0.1
°C/W between
the package base and the mounting surface is typi-
cal. Insure that the mounting surface is smooth
and flat. Thermal joint compound must be used to
reduce the effects of small surface irregularities.
The heatsink should incorporate a copper heat
spreader to obtain best results.
The package is designed to be clamped to a
heatsink. A clamped joint maintains the required
mounting pressure while allowing for thermal ex-
pansion of both the device and the heat sink. A
simple clamp, and two 6-32 (M3.5) screws can pro-
vide the minimum 125 lb required mounting force.
T = 12 in-lb.
Clamp
Heat Sink
D
S
G
S
D
G
S
ARF15--
BeO
1525-xx
.005
.045
.250
.500
1.065
.207
.375
.105 typ.
1.065
D
S
G
TYPICAL LARGE SIGNAL
INPUT - OUPUT
IMPEDANCE
CHARACTERISTICS
F (MHz)
Zin ()ZOL ()
2.0
13.5
27
40
5.4 - j 9.6
0.30 - j 1.2
0.26 + j .58
0.36 + j 1.6
46 - j 10.5
16.4 - j 23
4.9 - j 14.6
2.3 - j 10.3
Zin - Gate shunted with 25
ZOL - Conjugate of optimum
load for 750 Watts output
IDQ = 100mA
Vdd = 300V
ARF1505
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.2
0.1
0.01
0.001
0.0001
0.1
0.02
0.05
0.2
D=0.5
0.01
SINGLE PULSE
TC,CASETEMPERATURE(°C)
Figure 4, Typical Threshold Voltage vs Temperature
VDS,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
Figure 5, Typical Output Characteristics
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-50 -25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
I D
,DRAIN
CURRENT
(AMPERES)
V
GS(th)
,THRESHOLD
VOLTAGE
(NORMALIZED)
8V
5V
VGS = 10 & 9V
6V
7V
35
30
25
20
15
10
5
0
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相关代理商/技术参数 |
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| ARF1510 | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET RF N-CH 1000V 8A T1 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
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| ARF1519 | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk |
| ARF1519G | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
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