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参数资料
| 型号： | ARF461BG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| 封装： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 141K |
| 代理商： | ARF461BG |
050-5987
Rev
D
6-2008
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
250V
150W
65MHz
The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for push-
pull scientic, commercial, medical and industrial RF power amplier applications up to 65 MHz. They have been
optimized for both linear and high efciency classes of operation.
Specied 250 Volt, 40.68 MHz Characteristics:
Output Power = 150 Watts.
Gain = 13dB (Class AB)
Efciency = 75% (Class C)
Low Cost Common Source RF Package.
Low Vth thermal coefcient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness.
RoHS Compliant
ARF461A(G)
ARF461B(G)
Common
Source
Microsemi Website - http://www.microsemi.com
Symbol
Parameter
ARF461AG/BG
Unit
V
DSS
Drain-Source Voltage
1000
V
DGO
Drain-Gate Voltage
1000
I
D
Continuous Drain Current @ T
C = 25°C
6.5
A
V
GS
Gate-Source Voltage
±30
V
P
D
Total Power Dissipation @ T
C = 25°C
250
W
R
θJC
Junction to Case
0.50
°C/W
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
T
L
Lead Temperature: 0.063” from Case for 10 Sec.
300
Symbol
Parameter
Min
Typ
Max
Unit
BV
DSS
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250 μA)
1000
V
DS(ON)
On State Drain Voltage 1 (I
D(ON) = 3.25A, VGS = 10V)
6.5
I
DSS
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
25
μA
Zero Gate Voltage Drain Current (V
DS = 0.8VDSS, VGS = 0, TC = 125°C)
250
I
GSS
Gate-Source Leakage Current (V
DS = ±30V, VDS = 0V)
±100
nA
g
fs
Forward Transconductance (V
DS = 25V, ID = 3.25A)
3
4
mhos
V
GS(TH)
Gate Threshold Voltage (V
DS = VGS, ID = 50mA)
3
5
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
TO
-24
7
相关PDF资料 |
PDF描述 |
|---|---|
| ARF461B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF461A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| AS-10.446875-12-3030-SMD-H30-TR | QUARTZ CRYSTAL RESONATOR, 10.446875 MHz |
| AS-32.768-S-F-5050-SMD-H32-TR | QUARTZ CRYSTAL RESONATOR, 32.768 MHz |
| AS-36.000-10-F-30100-EXT-SMD-H32-TR | QUARTZ CRYSTAL RESONATOR, 36 MHz |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ARF461CG | 功能描述:RF MOSFET N-CH 1000V TO247 制造商:microsemi corporation 系列:- 包装:散装 零件状态:停產 晶体管类型:N 通道 频率:65MHz 增益:15dB 电压 - 测试:50V 额定电流:25μA 噪声系数:- 功率 - 输出:150W 电压 - 额定:1000V 封装/外壳:TO-247-3 供应商器件封装:TO-247 标准包装:30 |
| ARF462 | 制造商:POSEICO 制造商全称:POSEICO 功能描述:FAST RECOVERY DIODE |
| ARF462A | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF462B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF462S45 | 制造商:POSEICO 制造商全称:POSEICO 功能描述:FAST RECOVERY DIODE |
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