- 您现在的位置：买卖IC网 > PDF目录36744 > ARF463AP1G VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD PDF资料下载
参数资料
| 型号： | ARF463AP1G |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| 封装： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 182K |
| 代理商： | ARF463AP1G |
050-4924
Rev
B
3-2006
30
45
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
Class C
V
DD = 150V
P
out = 150W
30
25
20
15
10
5
0
GAIN
(dB)
DYNAMIC CHARACTERISTICS
ARF463A_BP1(G)
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS = 0V
V
DS = 50V
f = 1 MHz
V
GS = 15V
V
DD = 0.5 VDSS
I
D = ID[Cont.] @ 25°C
R
G = 1.6
MIN
TYP
MAX
670
120
50
5.6
4.3
13.5
4.2
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
η
ψ
Test Conditions
f = 81.36 MHz
V
GS = 0V
V
DD = 125V
Pout = 100W
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1
MIN
TYP
MAX
13
15
70
75
UNIT
dB
%
1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
1
10
100
500
8
6
4
2
0
24
6
8
10
CAPACITANCE
(pf)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
3000
1000
500
100
50
10
.1
.5
1
5 10
50
200
I D
,DRAIN
CURRENT
(AMPERES)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
I D
,DRAIN
CURRENT
(AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = +125°C
TJ = +25°C
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
Ciss
Coss
Crss
36
10
5
1
.5
.1
1mS
10mS
100mS
DC
100uS
相关PDF资料 |
PDF描述 |
|---|---|
| ARF463AP1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463BP1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463BP1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463AP1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ARF463B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF463BG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 500V 9A TO-247 制造商:Microsemi Corporation 功能描述:ARF463B Series 500 V 81.36 MHz SMT N-Channel RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF463BP1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| ARF463BP1G | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 500V 9A TO-247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF463S45 | 制造商:POSEICO 制造商全称:POSEICO 功能描述:FAST RECOVERY DIODE |
发布紧急采购，3分钟左右您将得到回复。