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参数资料
| 型号： | ARF463AP1G |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| 封装： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 182K |
| 代理商： | ARF463AP1G |
050-4924
Rev
B
3-2006
G
PS
,COMMON
SOURCE
AMPLIFIER
GAIN
(dB)
POUT, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
14
12
10
8
6
0
40
80
120
160
120
80
40
0
02
4
6
8
10
PIN, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
P
OUT
,POWER
OUT
(WATTS)
Class C
V
DD = 150V
f = 81.36 MHz
Class C
V
DD = 150V
f = 81.36 MHz
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75
100 125 150
1
5
10
15
20
25
30
I D
,DRAIN
CURRENT
(AMPERES)
V
GS(th)
,THRESHOLD
VOLTAGE
(NORMALIZED)
ARF463A_BP1(G)
6.5V
5.5V
6V
7V
VGS=15V
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
0.01
9V
8V
7.5V
10V
D=0.5
0.8
0.1
0.05
0.01
0.005
0.001
16
12
8
4
0
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
Zin ()
ZOL ()
2.0
13.5
27
40
65
80
100
24 - j 5.0
7.8 - j 11
2.1 - j 6.4
.74 - j 3.3
.30 + j .42
.46 + j 2.0
.87 + j 3.7
55 - j 4.8
41 - j 24
23 - j 26.2
13.6 - j 22
6.1 - j 14.2
4.2 - j 10.7
2.7 - j 7.1
Zin - Gate shunted with 25
IDQ = 50mA
ZOL - Conjugate of optimum load for 100 Watts output at Vdd = 125V
相关PDF资料 |
PDF描述 |
|---|---|
| ARF463AP1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463BP1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463BP1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463AP1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ARF463B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF463BG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 500V 9A TO-247 制造商:Microsemi Corporation 功能描述:ARF463B Series 500 V 81.36 MHz SMT N-Channel RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF463BP1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| ARF463BP1G | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 500V 9A TO-247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF463S45 | 制造商:POSEICO 制造商全称:POSEICO 功能描述:FAST RECOVERY DIODE |
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