参数资料
型号: ARF463B
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: 功率晶体管
英文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
文件页数: 3/4页
文件大小: 67K
代理商: ARF463B
050-5998
Rev
B
6-2003
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
I D
,DRAIN
CURRENT
(AMPERES)
V
GS(th)
,THRESHOLD
VOLTAGE
(NORMALIZED)
ARF463A/B
5.5V
4.5V
4V
5V
VGS=15 & 10V
6V
8V
25
20
15
10
5
0
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
Zin ()
Z
OL ()
2.0
13.5
27
40
65
80
100
24 - j 5.0
7.8 - j 11
2.1 - j 6.4
.74 - j 3.3
.30 + j .42
.46 + j 2.0
.87 + j 3.7
55 - j 4.8
41 - j 24
23 - j 26.2
13.6 - j 22
6.1 - j 14.2
4.2 - j 10.7
2.7 - j 7.1
Zin - Gate shunted with 25!!
IDQ = 50mA
Z
OL -
Conjugate of optimum load for 100 Watts output at Vdd = 125V
Figure 9b, TRANSIENT THERMAL IMPEDANCE MODEL
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
0.5
0.1
0.3
0.7
0.9
0.05
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
Figure 9a, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.147
0.231
0.321
0.00259F
0.00818F
0.127F
Power
(watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
相关PDF资料
PDF描述
ARF463A VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
ARF466A VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-264AA
ARF466B VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-264AA
ARF466B VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-264AA
ARF466A VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-264AA
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