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参数资料
| 型号： | ARF466A |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 167K |
| 代理商： | ARF466A |
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
RF POWER MOSFETs
N- CHANNEL ENHANCEMENT MODE
200V 300W
45MHz
The ARF466A and ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull
scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been optimized
for both linear and high efficiency classes of operation.
Specified 150 Volt, 40.68 MHz Characteristics:
Output Power = 300 Watts.
Gain = 16dB (Class AB)
Efficiency = 75% (Class C)
Low Cost Common Source RF Package.
Low Vth thermal coefficient.
LowThermalResistance.
Optimized SOA for Superior Ruggedness.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(ON)
I
DSS
I
GSS
g
fs
V
GS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250 A)
Drain-Source On-State Resistance 1 (V
GS = 10V
, I
D = 6.5A
)
Zero Gate Voltage Drain Current (V
DS = 1000V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 800V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Forward Transconductance (V
DS = 25V, ID = 6.5A)
Gate Threshold Voltage (V
DS = VGS, ID = 1mA)
MIN
TYP
MAX
1000
0.90
25
250
±100
3.3
7
9
24
UNIT
Volts
ohms
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θJC
T
J,TSTG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C = 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF466A_B
1000
13
±30
357
0.35
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
G
D
S
ARF466A
ARF466B
TO-264
Common
Source
050-4925
Rev
B
2-2005
相关PDF资料 |
PDF描述 |
|---|---|
| ARF466B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-264AA |
| ARF466B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-264AA |
| ARF466A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-264AA |
| ARF473 | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| ARF476FL | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ARF466AG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF FET N CH 1000V 13A TO264 制造商:Microsemi Corporation 功能描述:N-channel 357 W 1000 V RF MOSFET (VDMOS) 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF466B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| ARF466BG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF FET N CH 1000V 13A TO264 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF466FL | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1000V 13A DIE |
| ARF466FL_10 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE |
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