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参数资料
| 型号： | ARF476FL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 183K |
| 代理商： | ARF476FL |
050-4931
B
6-2007
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS (each device)
Symbol
BV
DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
g
fs1
/
g
fs2
V
GS(TH)
V
GS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Voltage 1 (I
D(ON)
= 5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 50V, V
GS
= 0, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 15V, I
D
= 5A)
Forward Transconductance Match Ratio (V
DS
= 15V, I
D
= 5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 200mA)
Gate Threshold Voltage Match (V
DS
= V
GS
, I
D
= 200mA)
MIN
TYP
MAX
500
2.9
4
100
500
±100
3
3.6
0.9
1.1
2
3.3
4
0.2
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
(each device)
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF476FL
500
10
±30
910
-55 to 175
300
UNIT
Volts
Amps
Volts
Watts
°C
RF POWER MOSFET
N - CHANNEL PUSH - PULL PAIR
165V
450W 150MHz
The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage
push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
Specified 150 Volt, 128 MHz Characteristics:
Output Power = 900 Watts Peak
Gain = 15dB (Class AB)
Efficiency = 50% min
Extended Flange - 3mm Creep Distance.
High Voltage Breakdown and Large SOA
for Superior Ruggedness.
Low Thermal Resistance.
ARF476FL
Common Source
Push-Pull Pair
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJHS
Characteristic
Junction to Case
Junction to Sink (Use High Efficiency Thermal Grease and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.15
0.165
0.30
0.33
UNIT
°C/W
G
D
S
D
Microsemi Website - http://www.microsemi.com
ARF476FL
D
GG
S
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相关代理商/技术参数 |
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|---|---|
| ARF476FL_10 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR |
| ARF477FL | 制造商:Microsemi Corporation 功能描述:Trans RF MOSFET N-CH 500V 15A 8-Pin 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF FET N Channel 500V Push- 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
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| ARF500 12R J | 功能描述:RES CHAS MNT 12 OHM 5% 500W 制造商:ohmite 系列:ARF 包装:散装 零件状态:在售 电阻值:12 Ohms 容差:±5% 功率（W）:500W 成分:绕线 温度系数:±150ppm/°C 工作温度:0°C ~ 200°C 特性:脉冲耐受 涂层，外壳类型:铝 安装特性:螺钉孔 大小/尺寸:10.630" 长 x 3.110" 宽 (270.00mm x 79.00mm) 高度 - 安装（最大值）:0.728"（18.50mm） 引线形式:导线引线 封装/外壳:矩形外壳 故障率:- 标准包装:1 |
| ARF500 16R J | 功能描述:RES CHAS MNT 16 OHM 5% 500W 制造商:ohmite 系列:ARF 包装:散装 零件状态:在售 电阻值:16 Ohms 容差:±5% 功率（W）:500W 成分:绕线 温度系数:±150ppm/°C 工作温度:0°C ~ 200°C 特性:脉冲耐受 涂层，外壳类型:铝 安装特性:螺钉孔 大小/尺寸:10.630" 长 x 3.110" 宽 (270.00mm x 79.00mm) 高度 - 安装（最大值）:0.728"（18.50mm） 引线形式:导线引线 封装/外壳:矩形外壳 故障率:- 标准包装:1 |
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