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参数资料
| 型号： | ARF473 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 125K |
| 代理商： | ARF473 |
050-4920
Rev
C
6-2003
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
g
fs1
/ gfs2
V
GS(TH)
V
GS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250 A)
On State Drain Voltage 1 (I
D(ON) = 5A, VGS = 10V)
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 50V, VGS = 0, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Forward Transconductance (V
DS = 25V, ID = 5A)
Forward Transconductance Match Ratio (V
DS = 25V, ID = 5A)
Gate Threshold Voltage (V
DS = VGS, ID = 200mA)
Gate Threshold Voltage Match (V
DS = VGS, ID = 200mA)
MIN
TYP
MAX
500
4
25
250
±100
46
0.9
1.1
35
0.1
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
I
D
V
GS
P
D
T
J,TSTG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
(each device)
Gate-Source Voltage
Total Device Dissipation @ T
C = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF473
500
10
±30
500
-55 to 200
300
UNIT
Volts
Amps
Volts
Watts
°C
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
165 V 300 W 150 MHz
The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage
push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
Specified 135 Volt, 130 MHz Characteristics:
Output Power = 300 Watts.
Gain = 13dB (Class AB)
Efficiency = 50%
High Performance Push-Pull RF Package.
High Voltage Breakdown and Large SOA
for Superior Ruggedness.
Low Thermal Resistance.
ARF473
Common Source
Push-Pull Pair
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θCS
Characteristic
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.35
0.1
UNIT
°C/W
ARF473
G
D
S
(Flange)
D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ARF475FL | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET 制造商:Microsemi 功能描述:Trans RF MOSFET N-CH 500V 10A 8-Pin T3A |
| ARF475FL_10 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR |
| ARF475LF | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| ARF476FL | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF FET N CH 500V 10A PSH PUL PR 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF476FL_10 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR |
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