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参数资料
| 型号： | ARF521 |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | 0.500 INCH, CERAMIC, SOE, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 193K |
| 代理商： | ARF521 |
050-4930
Rev
A
2-2006
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specified.
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
165V 150W 150MHz
The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI
power amplifiers up to 150MHz.
Specified125Volt,81MHzCharacteristics:
Output Power = 150 Watts.
Gain = 13dB (Class AB)
Efficiency = 50%
High Voltage Breakdown and Large SOA
for Superior Ruggedness.
Industry standard package
Low Vth thermal coefficient
ARF521
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
G
D
S
APT
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(ON)
I
DSS
I
GSS
g
fs
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250 A)
Drain-Source On-State Resistance 1 (I
D(ON) = 5A, VGS = 10V)
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 50V, VGS = 0, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Forward Transconductance (V
DS = 15V, ID = 5A)
Gate Threshold Voltage (V
DS = VGS, ID = 200mA)
MIN
TYP
MAX
500
0.56
8
25
250
±100
3
3.6
24
UNIT
Volts
Ohms
A
nA
mhos
Volts
Symbol
V
DSS
I
D
V
GS
P
D
T
J,TSTG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
Gate-Source Voltage
Total Device Dissipation @ T
C = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF521
500
10
±30
250
-55 to 175
300
UNIT
Volts
Amps
Volts
Watts
°C
V
GS(TH)
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θCS
Characteristic
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.60
0.1
UNIT
°C/W
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