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参数资料
| 型号： | ARF521 |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | 0.500 INCH, CERAMIC, SOE, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 193K |
| 代理商： | ARF521 |
050-4930
Rev
A
2-2006
DYNAMIC CHARACTERISTICS
ARF521
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS = 0V
V
DS = 50V
f = 1 MHz
V
GS = 15V
V
DD = 0.5 VDSS
I
D = ID[Cont.] @ 25°C
R
G = 1.6
MIN
TYP
MAX
780
900
125
150
710
5.1
10
4.1
8
12
18
4.0
7
UNIT
pF
ns
FUNCTIONALCHARACTERISTICS
Symbol
G
PS
η
ψ
Test Conditions
f = 81MHz
I
dq = 50mA
V
DD = 125V
Pout = 150W
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 5:1
MIN
TYP
MAX
14
15
50
55
UNIT
dB
%
1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%.
APT Reserves the right to change, without notice, the specifications and information contained herein.
GAIN
(dB)
FREQUENCY (MHz)
Figure 1, Typical Gain vs. Frequency
25
20
15
10
0
25
50
75
100
125
150
Class AB
V
DD = 125V
P
out = 150W
1
5
10
50 100
500
I D
,DRAIN
CURRENT
(AMPERES)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
TC =+25°C
TJ=+175°C
SINGLE PULSE
40
10
5
1
.5
.1
1ms
10ms
100us
OPERATION HERE
LIMITED BY RDS (ON)
DC
100ms
CAPACITANCE
(pf)
VDS,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
3000
1000
500
100
50
10
1
.1
1
10
100 200
Ciss
Coss
Crss
30
25
20
15
10
5
0
02
4
6
8
10
VGS,GATE-TO-SOURCEVOLTAGE(VOLTS)
Figure 3, Typical Transfer Characteristics
I D
,DRAIN
CURRENT
(AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = +125°C
TJ = +25°C
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