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参数资料
| 型号： | AS5LC512K8F-20L/XT |
| 厂商： | AUSTIN SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | 512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT |
| 中文描述： | 512K X 8 STANDARD SRAM, 20 ns, CDFP36 |
| 封装： | CERAMIC, DFP-36 |
| 文件页数： | 1/12页 |
| 文件大小： | 359K |
| 代理商： | AS5LC512K8F-20L/XT |
SRAM
AS5LC512K8
AS5LC512K8
Rev. 1.1 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
Austin Semiconductor, Inc.
FEATURES
Ultra High Speed Asynchronous Operation
Fully Static, No Clocks
Multiple center power and ground pins for improved
noise immunity
Easy memory expansion with CE\ and OE\
options
All inputs and outputs are TTL-compatible
Single +3.3V Power Supply +/- 0.3%
Data Retention Functionality Testing
Cost Efficient Plastic Packaging
Extended Testing Over -55C to +125C for plastics
OPTIONS
MARKING
Timing
12ns access
-12
15ns access
-15
20ns access
-20
Operating Temperature Ranges
Military (-55oC to +125oC)
XT
Industrial (-40oC to +85oC)
IT
Package(s)
Ceramic Flatpack
F
No. 307
Plastic SOJ (400 mils wide)
DJ
Ceramic LCC
EC
No. 210
2V data retention/low power
L
PIN ASSIGNMENT
(Top View)
36-Pin PSOJ (DJ)
36-Pin CLCC (EC)
GENERAL DESCRIPTION
The AS5LC512K8 is a 3.3V high speed SRAM. It offers
flexibility in high-speed memory applications, with chip enable (CE\)
and output enable (OE\) capabilities. These features can place the
outputs in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write enable (WE\)
and CE\ inputs are both LOW. Reading is accomplished when WE\
remains HIGH and CE\ and OE\ go LOW.
As a option, the device can be supplied offering a reduced power
standby mode, allowing system designers to meet low standby power
requirements. This device operates from a single +3.3V power supply
and all inputs and outputs are fully TTL-compatible.
The AS5LC512K8DJ offers the convenience and reliability of the
AS5LC512K8 SRAM and has the cost advantage of a plastic
encapsulation.
36-Pin Flat Pack (F)
AVAILABLE AS MILITARY
SPECIFICATIONS
MIL-STD-883 for Ceramic
Extended Temperature Plastic (COTS)
512K x 8 SRAM
3.3 VOLT HIGH SPEED SRAM with
CENTER POWER PINOUT
For more products and information
please visit our web site at
www.austinsemiconductor.com
相关PDF资料 |
PDF描述 |
|---|---|
| AS5LC512K8F-20P/883C | 512K X 8 STANDARD SRAM, 20 ns, CDFP36 |
| AS5SS128K36DQ-11/IT | 128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT |
| AS5SS128K36DQ-11/XT | 128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT |
| AS5SS128K36DQ-12/IT | 128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT |
| AS5SS128K36DQ-12/XT | 128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS5LC512K8F-25L/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT |
| AS5LC512K8F-25L/IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT |
| AS5LC512K8F-25L/XT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT |
| AS5R100J | 功能描述:线绕电阻器 - 透孔 .1 OHM 5% 5W RoHS:否 制造商:Bourns 电阻:10 Ohms 容差:5 % 功率额定值:7 W 温度系数:200 PPM / C 系列:FW 端接类型:Axial 工作温度范围:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封装:Ammo 产品:Power Resistors Wirewound High Energy |
| AS5R100JLF | 制造商:TT Electronics / IRC 功能描述:AS5R100JLF |
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