- 您现在的位置：买卖IC网 > PDF目录166232 > AS5SS128K36DQ-11/IT (AUSTIN SEMICONDUCTOR INC) 128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT PDF资料下载
参数资料
| 型号： | AS5SS128K36DQ-11/IT |
| 厂商： | AUSTIN SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | 128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT |
| 中文描述： | 128K X 36 ZBT SRAM, 8.5 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 16/16页 |
| 文件大小： | 119K |
| 代理商： | AS5SS128K36DQ-11/IT |
SSRAM
AS5SS128K36
AS5SS128K36
Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
Austin Semiconductor, Inc.
DESCRIPTION
CONDITIONS
SYM
-11
-12
UNITS NOTES
Power Supply
Current: Operating
Device selected; All inputs < VIL
or > VIH; Cycle time > tKC (MIN)
VDD = MAX; Outputs open
IDD
275
250
mA
1, 2
Power Supply
Current: Idle
Device selected; VDD = MAX;
CKE\ > VIH;
All inputs < VSS + 0.2 or > VDD -0.2;
Cycle time > tKC (MIN)
IDD1
22
20
mA
1, 2
CMOS Standby
Device selected; VDD = MAX;
All inputs < VSS + 0.2 or > VDD -0.2;
All inputs static; CLK frequency = 0
ISB2
10
mA
2
TTL Standby
Device selected; VDD = MAX;
All inputs < VIL or > VIH;
All inputs static; CLK frequency = 0
ISB3
25
mA
2
Clock Running
Device selected; VDD = MAX;
ADV/LD\ > VIH; All inputs < VSS + 0.2
or > VDD - 0.2; Cycle time > tKC (MIN)
ISB4
65
60
mA
2
Snooze Mode
ZZ > VIH
ISB2Z
10
mA
2
MAX
I
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
(-55oC < T
A
< +125oC; V
DD,
V
DD
Q = +3.3V +0.165V unless otherwise noted)
THERMAL RESISTANCE
DESCRIPTION
CONDITIONS
SYM
TYP
UNITS
NOTES
Thermal Resistance
(Junction to Ambient)
θJA
46
oC/W
3
Thermal Resistance
(Junction to Top of Case)
θJC
2.8
oC/W
3
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51
NOTE:
1.
I
DD
is specified with no output current and increases with faster cycle times. I
DD
Q increases with faster cycle times and
greater output loading.
2.
“Device deselected” means device is in a deselected cycle as defined in the truth table. “Device selected” means device
is active (not in deselected mode).
3.
This parameter is sampled.
相关PDF资料 |
PDF描述 |
|---|---|
| AS5SS128K36DQ-11/XT | 128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT |
| AS5SS128K36DQ-12/IT | 128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT |
| AS5SS128K36DQ-12/XT | 128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT |
| AS5SS256K18DQ-10/IT | 256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through |
| AS5SS256K18DQ-10/XT | 256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS5SS128K36DQ-11XT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x36 Fast Synchronous SRAM |
| AS5SS128K36DQ-12/IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT |
| AS5SS128K36DQ-12/XT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT |
| AS5SS128K36DQ-12IT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x36 Fast Synchronous SRAM |
| AS5SS128K36DQ-12XT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x36 Fast Synchronous SRAM |
发布紧急采购，3分钟左右您将得到回复。