参数资料
型号: AS7C33512PFS32A-225TQC
厂商: ALLIANCE SEMICONDUCTOR CORP
元件分类: SRAM
英文描述: 512K X 32 STANDARD SRAM, 6.9 ns, PQFP100
封装: 14 X 20 MM, TQFP-100
文件页数: 18/21页
文件大小: 463K
代理商: AS7C33512PFS32A-225TQC
AS7C33512PFS32A
AS7C33512PFS36A
12/2/02, v. 0.9.8 Advance Info
Alliance Semiconductor
6 of 21
TQFP and BGA thermal resistance
Absolute maximum ratings
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional oper-
ation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Recommended operating conditions at 2.5V I/O
Description
Conditions
Symbol
Typical
Units
Thermal resistance
(junction to ambient)1
1 This parameter is sampled
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51
1–layer
θ
JA
40
°C/W
4–layer
θ
JA
22
°C/W
Thermal resistance
(junction to top of case)1
θ
JC
8
°C/W
Parameter
Symbol
Min
Max
Unit
Power supply voltage relative to GND
VDD, VDDQ
–0.5
+4.6
V
Input voltage relative to GND (input pins)
VIN
–0.5
VDD + 0.5
V
Input voltage relative to GND (I/O pins)
VIN
–0.5
VDDQ + 0.5
V
Power dissipation
Pd
–1.8
W
Short circuit output current
IOUT
–20
mA
Storage temperature (TQFP)
Tstg (TQFP)
–65
+150
oC
Storage temperature (BGA)
Tstg (BGA)
–65
+125
oC
Temperature under bias
Tbias
–65
+135
oC
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ
3.135
3.3
3.465
V
Ground supply
Vss
0
V
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ
2.375
2.5
2.625
V
Ground supply
Vss
0
V
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