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参数资料
| 型号： | AS8F128K32Q-150/IT |
| 厂商： | AUSTIN SEMICONDUCTOR INC |
| 元件分类： | PROM |
| 英文描述： | 128K x 32 FLASH FLASH MEMORY ARRAY |
| 中文描述： | 128K X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68 |
| 封装： | CERAMIC, QFP-68 |
| 文件页数： | 9/22页 |
| 文件大小： | 1260K |
| 代理商： | AS8F128K32Q-150/IT |
FLASH
AS8F128K32
AS8F128K32
Rev. 2.7 09/07
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
17
Austin Semiconductor, Inc.
FIGURE 13: Alternate CEx\ Controlled Write Operation Timings
NOTES:
1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O7\ = Complement of Data Input, D
OUT = Array Data.
2. Figure indicates the last two bus cycles of the command sequence.
ERASE AND PROGRAMMING PERFORMANCE
TYP
1
MAX
2
UNIT
Chip/Sector Erase Time
1.0
15
sec
Excludes 00h programming prior to erasure
4
Byte Programming Time
14
1000
s
Chip Programming Time
3
1.8
12.5
sec
LIMITS
COMMENTS
PARAMETER
Excludes system-level overhead5
NOTES:
1. Typical program and erase times assume the following conditions: 25° C, 5.0 V V
CC, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC = 4.5 V (4.75 V for -45, -55 PDIP), 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster
than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does the device set I/O5 = 1. See
the section on I/O5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 1 for further
information on command definitions.
6. The device has a typical erase and program cycle endurance of 1,000,000 cycles. 100,000 cycles are guaranteed.
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
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PDF描述 |
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| AS8F128K32Q-150/Q | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q-150/XT | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-60/883C | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-60/IT | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-60/Q | 128K x 32 FLASH FLASH MEMORY ARRAY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS8F128K32Q1-60/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-60/IT | 制造商:Micross Components 功能描述:FLASH-MCM,4 MB - Trays |
| AS8F128K32Q1-60/Q | 制造商:Micross Components 功能描述:FLASH-MCM,4 MB - Trays |
| AS8F128K32Q1-60/XT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-70/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 FLASH FLASH MEMORY ARRAY |
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