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参数资料
| 型号： | AS8F128K32Q-150/Q |
| 厂商： | AUSTIN SEMICONDUCTOR INC |
| 元件分类： | PROM |
| 英文描述： | 128K x 32 FLASH FLASH MEMORY ARRAY |
| 中文描述： | 128K X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68 |
| 封装： | CERAMIC, QFP-68 |
| 文件页数： | 1/22页 |
| 文件大小： | 1260K |
| 代理商： | AS8F128K32Q-150/Q |
FLASH
AS8F128K32
AS8F128K32
Rev. 2.7 09/07
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
Austin Semiconductor, Inc.
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS8F128K32 is a 4 Megabit
CMOS FLASH Memory Module organized as 128K x 32 bits. The
AS8F128K32 achieves high speed access (60 to 150 ns), low power
consumption and high reliability by employing advanced CMOS
memory technology.
The device is designed to be programmed in-system with the
standard system 5.0V V
CC
supply. A 12.0V V
PP
is not required for
program or erase operation. The device can also be programmed or
erased in standard EPROM programmers. To eliminate bus
contention the device has seperate chip enbaled (CEx\), write enable
(WEx\) and output enable (OE) controls.
The device requires only a single 5.0 volt power supply for both
read and write functions. Internally generated and regulated voltages
are provided for the program and erase operations.
The device is entirely command set compatible with the JEDEC
single-power-supply Flash standard. Commands are written to the
command register using standard microprocessor write timings.
Register contents serve as input to an internal state machine that
FEATURES
Fast Access Times: 60, 70, 90, 120 and 150ns
Operation with single 5V (±10%)
Compatible with JEDEC EEPROM command set
Any Combination of Sectors can be Erased
Supports Full Chip Erase
Embedded Erase and Program Algorithms
TTL Compatible Inputs and CMOS Outputs
Hardware Data Protection
Data\ Polling and Toggle Bits
Low Power consumption
Individual Byte Read/ Write Control
Minimum 1,000,000 Program/Erase Cycles per sector
guaranteed
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
SMD 5962-94716
MIL-STD-883
OPTIONS
MARKINGS
Timing
60ns
-60
70ns
-70
90ns
-90
120ns
-120
150ns
-150
Package
Ceramic Quad Flat pack
Q
No. 703
Ceramic Quad Flat pack
Q1
For more products and information
please visit our web site at
www.austinsemiconductor.com
128K x 32 FLASH
FLASH MEMORY ARRAY
controls the erase and programming circuitry. Write cycles also
internally latch addresses and data needed for the programming and
erase operations. Reading data out of the device is similar to reading
from other Flash or EPROM devices.
Device programming occurs by executing the program command
sequence. This invokes the Embedded Program algorithm—an internal
algorithm that automatically times the program pulse widths and
verifies proper cell margin.
Device erasure occurs by executing the erase command sequence.
This invokes the Embedded Erase algorithm—an internal algorithm
that automatically preprograms the array (if it is not already
programmed) before executing the erase operation. During erase, the
device automatically times the erase pulse widths and verifies proper
cell margin.
The host system can detect whether a program or erase operation
is complete by reading the I/O7 (Data\ Polling) and I/O6 (toggle)
status bits. After a program or erase cycle has been completed, the
device is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased
and reprogrammed without affecting the data contents of other
sectors. The device is erased when shipped from the factory.
The hardware data protection measures include a low V
CC
detector automatically inhibits write operations during power
transitions. The hardware sector protection feature disables both
program and erase operations in any combination of the sectors of
memory, and is implemented using standard EPROM programmers.
The system can place the device into the standby mode. Power
consumption is greatly reduced in this mode.
The device electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The bytes are
programmed one byte at a time using the EPROM programming
mechanism of hot electron injection.
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
GND
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
I/O 16
I/O 17
I/O 18
I/O 19
I/O 20
I/O 21
I/O 22
I/O 23
GND
I/O 24
I/O 25
I/O 26
I/O 27
I/O 28
I/O 29
I/O 30
I/O 31
Vcc
A1
1
A12
A13
A14
A15
A16
CS1\
OE
CS2\
NC
WE2\
WE3\
WE4\
NC
A0
A1
A2
A3
A4
A5
CS3\
GND
CS4\
WE1\
A6
A7
A8
A9
A10
Vcc
68 Lead CQFP (Q & Q1)
相关PDF资料 |
PDF描述 |
|---|---|
| AS8F128K32Q-150/XT | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-60/883C | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-60/IT | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-60/Q | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-60/XT | 128K x 32 FLASH FLASH MEMORY ARRAY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS8F128K32Q1-60/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-60/IT | 制造商:Micross Components 功能描述:FLASH-MCM,4 MB - Trays |
| AS8F128K32Q1-60/Q | 制造商:Micross Components 功能描述:FLASH-MCM,4 MB - Trays |
| AS8F128K32Q1-60/XT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-70/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 FLASH FLASH MEMORY ARRAY |
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