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参数资料
| 型号： | AT-32011-TR2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SMT, 4 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 104K |
| 代理商： | AT-32011-TR2 |
AT-32011, AT-32033
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32011 and AT-32033 are high performance
NPN bipolar transistors that have been optimized for
maximum ft at low voltage operation, making them
ideal for use in battery powered applications in wireless
markets. The AT-32033 uses the 3 lead SOT-23, while
the AT-32011 places the same die in the higher
performance 4 lead SOT-143. Both packages are industry
standard, and compatible with high volume surface
mount assembly techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely
high performance products that can perform a
multiplicity of tasks. The 20 emitter finger interdigitated
geometry yields an easy to match to and extremely fast
transistor with moderate power, low noise resistance,
and low operating currents.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla-
tor, or active mixer. Typical amplifier designs at 900
MHz yield 1.2 dB noise figures with 12 dB or more
associated gain at a 2.7 V, 2 mA bias, with noise
performance being relatively insensitive to input match.
High gain capability at 1 V, 1 mA makes these devices a
good fit for 900 MHz pager applications. Voltage
breakdowns are high enough for use at 5 volts.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz ft, 30 GHz fMAX
Self-Aligned-Transistor (SAT) process. The die are
nitride passivated for surface protection. Excellent
device uniformity, performance and reliability are
produced by the use of ion-implantation, self-alignment
techniques, and gold metalization in the fabrication of
these devices.
Features
High Performance Bipolar Transistor Optimized for Low
Current, Low Voltage Operation
900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA
Characterized for End-Of-Life Battery Use (2.7 V)
SOT-23 and SOT-143 SMT Plastic Packages
Tape-And-Reel Packaging Option Available
Lead-free Option Available
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
320
SOT-23 (AT-32033)
SOT-143 (AT-32011)
Outline Drawing
相关PDF资料 |
PDF描述 |
|---|---|
| AT-32063-TR1G | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32063-BLKG | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32063-TR2G | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32063-TR1 | 2 CHANNEL, S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32063-BLK | 2 CHANNEL, S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-32011-TR2G | 功能描述:射频双极小信号晶体管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT320240Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:李守华 15889415469 |
| AT-320240Q1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:AT-320240Q1 320 X 240 DOTS 1/240 DUTY |
| AT-320240Q5FIQW | 制造商:ZETTLER 制造商全称:ZETTLER Electronics 功能描述:SPECIFICATIONS FOR LCD MODULE |
| AT-320240Q6FIQW | 制造商:ZETTLER 制造商全称:ZETTLER Electronics 功能描述:SPECIFICATIONS FOR LCD MODULE |
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