参数资料
型号: AT-32011-TR2
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: PLASTIC, SMT, 4 PIN
文件页数: 4/10页
文件大小: 104K
代理商: AT-32011-TR2
3
Characterization Information, T
A = 25°C
AT-32011
AT-32033
Symbol
Parameters and Test Conditions
Units
Typ.
P1dB
Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dBm
13
G1dB
Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dB
16.5
15
IP3
Output Third Order Intercept Point (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dBm
24
|S
21|E
2
Gain in 50
System
V
CE = 2.7 V, IC = 2 mA
f = 0.9 GHz
dB
13
11.5
NOISE
FIGURE
(dB)
0
FREQUENCY (GHz)
1
1.5
2
1
0.5
2.5
1.5
2
1 mA
2 mA
5 mA
10 mA
20 mA
Ga
(dB)
0
FREQUENCY (GHz)
1.0
1.5
25
10
5
0.5
2.5
15
2.0
20
1 mA
2 mA
5 mA
10 mA
20 mA
Ga
(dB)
0
FREQUENCY (GHz)
1.0
1.5
10
5
0.5
2.5
15
2.0
20
1 mA
2 mA
5 mA
10 mA
20 mA
Figure 4. AT-32033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE = 2.7 V.
Figure 2. AT-32011 and AT-32033
Minimum Noise Figure vs. Frequency
and Current at VCE = 2.7 V.
Figure 3. AT-32011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE = 2.7 V.
Figure 6. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 2.7 V.
Figure 5. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 2.7 V.
Figure 7. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 2.7 V.
P
1dB
(dBm)
0
-5
FREQUENCY (GHz)
1.0
1.5
20
5
0
0.5
2.5
10
2.0
15
2 mA
5 mA
10 mA
20 mA
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
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