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参数资料
型号： AT-32033-TR1
元件分类： 小信号晶体管
英文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装： PLASTIC, SMT, 3 PIN
文件页数： 10/10页
文件大小： 104K
代理商： AT-32033-TR1
9
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50
VCE = 5 V, IC = 20 mA
Freq.
S11
S21
S12
S22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.58
-43
31.28
36.64
151
-38.13
0.012
72
0.83
-21
0.5
0.35
-128
23.51
14.99
103
-29.05
0.035
62
0.42
-40
0.9
0.31
-161
18.93
8.84
87
-25.30
0.054
64
0.33
-40
1.0
0.30
-167
18.06
8.00
84
-24.57
0.059
64
0.32
-40
1.5
0.29
170
14.74
5.46
72
-21.50
0.084
63
0.30
-44
1.8
0.30
158
13.22
4.58
65
-20.06
0.099
61
0.29
-47
2.0
0.30
151
12.35
4.15
61
-19.23
0.109
60
0.29
-50
2.4
0.32
138
10.85
3.49
53
-17.77
0.129
57
0.28
-56
3.0
0.35
121
8.99
2.82
42
-16.03
0.158
52
0.27
-64
4.0
0.41
98
6.64
2.15
25
-13.85
0.203
42
0.25
-80
5.0
0.48
83
4.90
1.76
9
-12.12
0.248
33
0.24
-100
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50
, 5 V, I
C = 20 mA
Freq.
Fmin
Rn
GHz
dB
Mag
Ang
–
0.5[1]
1.38
0.18
50
0.20
0.9
1.50
0.15
88
0.16
1.8
1.78
0.23
176
0.13
2.4
1.96
0.34
-156
0.12
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γ
opt
GAIN
(dB)
0
FREQUENCY (GHz)
23
30
15
10
4
20
MAG
S21
MSG
Figure 25. AT-32011 Gains vs.
Frequency at VCE = 5 V, IC = 20 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50
VCE = 5 V, IC = 20 mA
Freq.
S11
S21
S12
S22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.55
-31
30.00
31.61
138
-37.72
0.013
78
0.81
-16
0.5
0.20
-44
19.91
9.90
95
-25.85
0.051
77
0.56
-19
0.9
0.13
-31
15.15
5.72
82
-21.01
0.089
75
0.53
-22
1.0
0.12
-28
14.30
5.19
79
-20.18
0.098
74
0.53
-23
1.5
0.10
-7
11.03
3.56
68
-16.77
0.145
69
0.52
-30
1.8
0.09
5
9.63
3.03
61
-15.19
0.174
66
0.51
-33
2.0
0.10
13
8.82
2.76
57
-14.33
0.192
64
0.50
-36
2.4
0.11
25
7.49
2.37
50
-12.77
0.230
60
0.49
-42
3.0
0.13
36
5.93
1.98
39
-10.90
0.285
54
0.47
-51
4.0
0.18
42
4.19
1.62
23
-8.50
0.376
43
0.42
-67
5.0
0.22
43
2.98
1.41
8
-6.65
0.465
31
0.37
-86
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50
, 5 V, I
C = 20 mA
Freq.
Fmin
Rn
GHz
dB
Mag
Ang
–
0.5[1]
1.38
0.25
35
0.30
0.9
1.50
0.19
85
0.23
1.8
1.78
0.21
-150
0.14
2.4
1.96
0.39
-114
0.19
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γ
opt
GAIN
(dB)
0
FREQUENCY (GHz)
23
30
15
10
4
20
S21
MSG
MAG
Figure 26. AT-32033 Gains vs.
Frequency at VCE = 5 V, IC = 20 mA.
相关PDF资料
PDF描述
AT-32011-BLK UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-32033-TR2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-32011-TR1 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-32033-BLK UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-32011-TR2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
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AT-32033-TR2G 功能描述:射频双极小信号晶体管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
AT32063 制造商:AGILENT 制造商全称:AGILENT 功能描述:???d???A??????NPN?g?????W?X?^ ?c?C???E?^?C?vSOT-363?p?b?P?[?W
AT-32063 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor
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