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参数资料
| 型号： | AT-38043 |
| 英文描述： | NPN Silicon Bipolar Common Emitter Transistor (118K in pdf) |
| 中文描述： | NPN硅双极晶体管发射极普通（118K PDF格式） |
| 文件页数： | 2/14页 |
| 文件大小： | 117K |
| 代理商： | AT-38043 |
2
AT-38043 Absolute Maximum Ratings
Absolute
Maximum
[1]
Symbol
Parameter
Units
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2]
Junction Temperature
Storage Temperature
V
V
V
1.4
16.0
9.5
160
500
150
mA
mW
°
C
°
C
-65 to 150
Thermal Resistance
[3]
:
θ
jc
= 130
°
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2.
Derate at 7.7 mW/
°
C for T
C
> 85
°
C.
T
C
is defined to be the temperature
of the collector pin 4, where the
lead contacts the circuit board.
3. Using the liquid crystal technique,
V
CE
= 4.8 V, I
C
= 50 mA, T
J
= 150
°
C,
1–2
μ
m “hot-spot” resolution
.
Electrical Specifications, T
C
= 25
°
C
Freq. = 900 MHz, V
CE
= 4.8 V, I
CQ
= 15 mA, CW operation, Test Circuit A, unless otherwise specified
Symbol
P
1dB
G
1dB
η
C
Parameters and Test Conditions
Output Power @ 1 dB Gain Compression
[1]
1 dB Compression Gain
[1]
Collector Efficiency @ 1 dB Gain Compression
[1]
Mismatch Tolerance, No Damage
[1]
Units Min.
dBm
dB
%
Typ. Max.
+25.0
15.0
60
+23.5
13.5
45
P
out
= +25 dBm
7:1
any phase, 2 sec duration
F1 = 899 MHz
F2 = 901 MHz
IMD
3
3rd Order Intermodulation Distortion,
2-Tone Test, P
out
each tone = +14 dBm
[1]
dBc
–35
V
CE
= 3.0 V
BV
EBO
BV
CBO
BV
CEO
h
FE
I
CEO
Emitter-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Forward Current Transfer Ratio
Collector Leakage Current
I
E
= 0.2 mA, open collector
I
C
= 1.0 mA, open emitter
I
C
= 3.0 mA, open base
V
CE
= 3 V, I
C
= 160 mA
V
V
V
—
μ
A
1.4
16.0
9.5
50
150
330
15
V
CEO
= 5 V
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT38043TR1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 9.5V V(BR)CEO | 160MA I(C) | SOT-343 |
| AT-38086 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:4.8 V NPN Silicon Bipolar Common Emitter Transistor |
| AT-38086-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:4.8 V NPN Silicon Bipolar Common Emitter Transistor |
| AT-38086-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:4.8 V NPN Silicon Bipolar Common Emitter Transistor |
| AT3816-C-PDK | 制造商:Atmel Corporation 功能描述:DEV KIT - Boxed Product (Development Kits) |
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