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| 型号： | AT-41486 |
| 英文描述： | Up to 6 GHz Low Noise Silicon Bipolar Transistor(高达6 GHz低噪声硅双极型晶体管) |
| 中文描述： | 到6 GHz低噪声硅双极型晶体管（高达6 GHz的低噪声硅双极型晶体管） |
| 文件页数： | 1/6页 |
| 文件大小： | 46K |
| 代理商： | AT-41486 |
Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
Features
Low Noise Figure:
1.4 dB Typical at 1.0 GHz
1.7 dB Typical at 2.0 GHz
High Associated Gain:
18.0 dB Typical at 1.0 GHz
13.0 dB Typical at 2.0 GHz
High Gain-Bandwidth
Product:
8.0 GHz Typical f
T
Surface Mount Plastic
Package
Tape-and-Reel Packaging
Option Available
[1]
AT-41486
86 Plastic Package
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”.
Description
Agilent’s AT-41486 is a general
purpose NPN bipolar transistor
that offers excellent high fre-
quency performance. The AT-
41486 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50
at 900 MHz, makes this
device easy to use as a low noise
amplifier.
The AT-41486 bipolar transistor is
fabricated using Agilent’s 10 GHz
f
T
Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
1
4
3
2
EMITTER
BASE
EMITTER
COLLECTOR
Pin Connections
4
相关PDF资料 |
PDF描述 |
|---|---|
| AT-41511 | NPN Silicon Bipolar Transistor(NPN硅双极型晶体管) |
| AT-41532 | General purpose transistor |
| AT-41532-TR2 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | SOT-323 |
| AT-41586 | Low Cost General Purpose Transistors(低价格通用晶体管) |
| AT-42010 | Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-41486-BLK | 功能描述:TRANS SIL LOW NOISE BIPOLAR 86PL RoHS:否 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
| AT-41486-BLKG | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT41486TR1 | 制造商:HP 功能描述:* |
| AT-41486-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Up to 6 GHz Low Noise Silicon Bipolar Transistor |
| AT-41486-TR1G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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