参数资料
型号: AT-41532-TR2
英文描述: TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | SOT-323
中文描述: 晶体管|晶体管|叩| 12V的五(巴西)总裁| 50mA的一(c)|的SOT - 323
文件页数: 1/15页
文件大小: 88K
代理商: AT-41532-TR2
General Purpose, Low Current
NPN Silicon Bipolar Transistor
Technical Data
Features
General Purpose NPN
Bipolar Transistor
Optimized for Low Current,
Low Voltage Applications at
900 MHz, 1.8 GHz, and
2.4 GHz
Performance ( 5 V, 5 mA)
0.9 GHz: 1 dB NF, 15.5 dB G
A
1.8 GHz: 1.4 dB NF, 10.5 dB G
A
2.4 GHz: 1.9 dB NF, 9 dB G
A
Characterized for 3, 5, and
8 V Use
Miniature 3-lead SOT-323
( SC-70) Plastic Package
High Breakdown Voltage
( can be operated up to 10 V)
Applications
LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
LNA, Oscillator, Mixer, and
Gain Amplifier for
Pagers
Power Amplifier and
Oscillator for
RF-ID Tag
LNA and Gain Amplifier for
GPS
LNA for
CATV Set-Top Box
AT-41532
Description
Agilent’s AT-41532 is a general
purpose NPN bipolar transistor
that has been optimized for
maximum f
t
at low voltage
operation, making it ideal for use
in
battery powered
applications in cellular/PCS
and other wireless markets
.
The AT-41532 uses the miniature
3-lead SOT-323 (SC-70) plastic
package.
Optimized performance at 5 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
systems. Typical amplifier design
at 900 MHz yields 1 dB NF and
15.5 dB associated gain at 5 V and
5 mA bias. High gain capability at
1 V and 1 mA makes this device a
good fit for
900 MHz pager
applications
. A good noise
match near 50 ohms at 900 MHz
makes this a very user-friendly
device. Moreover, voltage
breakdowns are high enough to
support operation at 10 V.
The AT-41532 belongs to Agilent’s
AT-4XXXX series bipolar
transistors. It exhibits excellent
device uniformity, performance,
and reliability as a result of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication process.
3-Lead SC-70 (SOT-323)
Surface Mount Plastic
Package
Pin Configuration
BASE
EMITTER
COLLECTOR
41
相关PDF资料
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相关代理商/技术参数
参数描述
AT-41532-TR2G 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
AT41533 制造商:AGILENT 制造商全称:AGILENT 功能描述:General Purpose, Low Noise NPN Silicon Bipolar Transistor
AT-41533 制造商:AGILENT 制造商全称:AGILENT 功能描述:General Purpose, Low Noise NPN Silicon Bipolar Transistor
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