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参数资料
| 型号： | AT-41532-TR2 |
| 英文描述： | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | SOT-323 |
| 中文描述： | 晶体管|晶体管|叩| 12V的五（巴西）总裁| 50mA的一（c）|的SOT - 323 |
| 文件页数： | 4/15页 |
| 文件大小： | 88K |
| 代理商： | AT-41532-TR2 |
4
AT-41532 Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, V
CE
= 1 V, I
C
= 1 mA
Freq.
S
11
S
21
GHz
Mag
Ang
dB
Mag
0.5
0.787
-75
8.79
2.750
0.75
0.697
-104
7.28
2.311
1.0
0.620
-128
5.84
1.960
1.5
0.554
-166
3.40
1.480
2.0
0.538
-164
1.52
1.191
3.0
0.543
118
-1.06
0.886
4.0
0.559
79
-2.61
0.741
5.0
0.561
47
-3.06
0.703
6.0
0.545
28
-2.81
0.724
7.0
0.534
14
-2.46
0.754
8.0
0.544
2
-2.38
0.761
9.0
0.563
-10
-2.49
0.751
10.0
0.597
-23
-2.79
0.725
11.0
0.655
-34
-3.39
0.677
12.0
0.703
-42
-4.03
0.629
S
12
Mag
0.098
0.116
0.120
0.115
0.116
0.216
0.397
0.574
0.699
0.768
0.787
0.778
0.748
0.696
0.649
S
22
Ang
125
106
90
66
48
22
dB
-20.18
-18.74
-18.40
-18.80
-18.69
-13.30
-8.03
-4.83
-3.11
-2.30
-2.08
-2.18
-2.52
-3.15
-3.76
Ang
49
38
31
30
42
60
47
24
Mag
0.860
0.785
0.734
0.678
0.653
0.620
0.568
0.487
0.398
0.362
0.407
0.467
0.523
0.593
0.665
Ang
-22
-28
-32
-40
-50
-73
-102
-137
-180
130
88
58
35
16
5
-7
-20
-35
-52
-68
-84
-100
-112
0
-23
-44
-63
-80
-96
-110
-6
AT-41532 Typical Noise Parameters,
Common Emitter, Z
O
= 50
, V
CE
= 1 V, I
C
= 1 mA
Freq.
F
min
GHz
dB
R
n
G
assoc
dB
Mag
0.44
0.57
0.60
0.66
0.71
0.75
0.77
Ang
92
-183
-169
-140
-116
-95
-77
ohms
0.9
1.8
2.0
2.5
3.0
3.5
4.0
1.4
1.8
1.9
2.2
2.6
3.1
3.6
12.4
3.0
3.3
10.1
27.6
59.9
103.0
9.4
7.6
6.7
5.7
4.6
3.5
2.1
Γ
opt
Figure 9. Gain vs. Frequency at
1 V, 1 mA.
Note: dB( |S
21
| = 20*log( |S
21
|
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
21
(k
±
√
k
2
–1)
MAG = S
12
MSG = |S
21
|/|S
12
|
k = 1 – |S
11
|
2
– |S
22
|
2
+ |D|
2
; D = S
11
S
22 –
S
12
S
21
2*|S
12
||S
21
|
gmax
dB(S|2,1|)
k
-4
20
8
12
0
4
0
2
1
3
4
5
6
G
(
0
1.50
0.75
1.25
1.00
0.25
0.50
k
FREQUENCY (GHz)
16
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相关代理商/技术参数 |
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|---|---|
| AT-41532-TR2G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT41533 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:General Purpose, Low Noise NPN Silicon Bipolar Transistor |
| AT-41533 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:General Purpose, Low Noise NPN Silicon Bipolar Transistor |
| AT415-33 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:General Purpose, Low Noise NPNÊSilicon Bipolar Transistor |
| AT-41533-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:General Purpose, Low Noise NPN Silicon Bipolar Transistor |
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