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参数资料
| 型号： | AT-38043 |
| 英文描述： | Silicon Power Transistors(硅功率型晶体管) |
| 中文描述： | 硅功率晶体管（硅功率型晶体管） |
| 文件页数： | 6/15页 |
| 文件大小： | 210K |
| 代理商： | AT-38043 |
6
Figure 7. Collector-Base Capacitance
vs. Collector-Base Voltage (DC Test).
1.8
2.2
2.0
2.4
3.2
3.0
2.6
2.8
0
1
2
3
4
6
7
9
8
5
10
C
(
Vcb (V)
Packaged Model
C
CPad
CPad
Die Area = 0.67
CPad = 0.36 pF
E1
B
E2
CPad
Label
BF
IKF
ISE
NE
VAF
NF
TF
XTF
VTF
ITF
PTF
XTB
BR
IKR
ISC
NC
VAR
Value
280
299.9
9.9E-11
2.399
33.16
0.9935
1.6E-11
0.006656
0.02785
0.001
23
0
54.61
81
8.7E-13
1.587
1.511
Label
NR
TR
EG
IS
XTI
CJC
VJC
MJC
XCJC
FC
CJE
VJE
MJE
RB
RE
RC
Value
0.9886
1E-9
1.11
3.598E-15
3
1.02 pF
0.4276
0.2508
0.001
0.999
0.98 pF
0.811
0.596
5.435
1.30
0.01
AT-38043 Spice Model Parameters
Die Model
B
L = La
L = Lb
R = Rb
C = Cb
R = Ra
C = Ca
B
E1
E2
C
E
Label
Ra
Rb
La
Lb
Ca
Cb
Value
0.1
0.2
0.85 nH
0.25 nH
0.01 pF
0.01 pF
C
L = La
L = Lb
R = Rb
C = Cb
R = Ra
C = Ca
L = La
R = Ra
L = Lb
R = Rb
C = Cb
C = Ca
L = La
R = Ra
C = Cb
C = Ca
相关PDF资料 |
PDF描述 |
|---|---|
| AT-41435 | Up to 6 GHz Low Noise Silicon Bipolar Transistor(高达6 GHz低噪声硅双极型晶体管) |
| AT-41470 | Up to 6 GHz Low Noise Silicon Bipolar Transistor(高达6 GHz低噪声硅双极型晶体管) |
| AT-41486 | Up to 6 GHz Low Noise Silicon Bipolar Transistor(高达6 GHz低噪声硅双极型晶体管) |
| AT-41511 | NPN Silicon Bipolar Transistor(NPN硅双极型晶体管) |
| AT-41532 | General purpose transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT38043TR1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 9.5V V(BR)CEO | 160MA I(C) | SOT-343 |
| AT-38086 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:4.8 V NPN Silicon Bipolar Common Emitter Transistor |
| AT-38086-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:4.8 V NPN Silicon Bipolar Common Emitter Transistor |
| AT-38086-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:4.8 V NPN Silicon Bipolar Common Emitter Transistor |
| AT3816-C-PDK | 制造商:Atmel Corporation 功能描述:DEV KIT - Boxed Product (Development Kits) |
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