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参数资料
| 型号： | AT-38086-BLK |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 3/10页 |
| 文件大小： | 136K |
| 代理商： | AT-38086-BLK |
2
AT-38086 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
V
EBO
Emitter-Base Voltage
V
1.4
V
CBO
Collector-Base Voltage
V
16.0
V
CEO
Collector-Emitter Voltage
V
9.5
I
C
Collector Current [2]
mA
250
I
C
Collector Current [3]
mA
160
P
T
Peak Power Dissipation [2, 4]
W
3.7
P
T
CW Power Dissipation [3, 5]
mW
460
T
j
Junction Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to 150
Thermal Resistance[6]:
θ
jc = 140°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. Pulsed operation, pulse width = 577
sec, duty cycle = 12.5%.
3. CW operation.
4. Derate at 57.1 mW/
°C for T
C >85°C. T
C is defined to be the temperature of the
collector pin 3, where the lead contacts the circuit board.
5. Derate at 7.1 mW/
°C for T
C >85°C. T
C is defined to be the temperature of the
collector pin 3, where the lead contacts the circuit board.
6. Using the liquid crystal technique, VCE = 4.5 V, Ic = 50 mA, Tj =150°C, 1-2 m
“hot-spot” resolution.
Electrical Specifications, T
C = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Freq. = 900 MHz, V
CE = 4.8 V, I
CQ = 20 mA, Pulse width = 577 sec,
duty cycle = 12.5%, unless otherwise specified
P
out
Output Power ,
Test Circuit A, Pin = +17 dBm
dBm
+26.5
+28.0
Pulsed Operation[1]
η
C
Collector Efficiency,
Test Circuit A, Pin = +17 dBm
%
50
60
Pulsed Operation[1]
Mismatch Tolerance
Test Circuit A, Pout = +28 dBm,
7:1
No Damage, Pulsed[1]
any phase, 2 sec duration
P
out
Output Power ,
F = 836.5 MHz, ICQ = 15 mA
dBm
+22.0
+23.5
CW Operation[2]
Test Circuit B, Pin = +10 dBm
IMD3
3rd Order Intermodulation Distortion,
F1 = 899 MHz, F2 = 901 MHz
dBc
-35
2-Tone Test, Pout each tone = +17 dBm, CW
[2,3]
ICQ = 15 mA, Test Circuit B
Mismatch Tolerance, No Damage ,
F = 836.5 MHz, ICQ = 15 mA
7:1
CW[2]
Test Circuit B, Pout = +23.5 dBm
any phase, 2 sec duration
BV
EBO
Emitter-Base Breakdown Voltage
I
E = 0.2 mA, open collector
V
1.4
BV
CBO
Collector-Base Breakdown Voltage
I
C = 1.0 mA, open emitter
V
16.0
BV
CEO
Collector-Emitter Breakdown Voltage
I
C = 3.0 mA, open base
V
9.5
h
FE
Forward Current Transfer Ratio
V
CE = 3 V, IC = 160 mA
—
40
150
330
I
CEO
Collector Leakage Current
V
CEO = 5 V
A15
Notes:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (GSM).
2. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit B (AMPS).
3. Test circuit B re-tuned at 900 MHz.
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