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| 型号： | AT-41511-BLKG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, SMT, 4 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 119K |
| 代理商： | AT-41511-BLKG |
AT-41511, AT-41533
General Purpose, Low Noise NPN
Silicon Bipolar Transistors
Data Sheet
Description
Avago’s AT-41511 and AT-41533 are general purpose NPN
bipolar transistors that oer excellent high frequency
performance at an economical price. The AT-41533 uses
the 3 lead SOT-23, while the AT-41511 places the same
die in the lower parasitic 4 lead SOT-143. Both packages
are industry standard, and compatible with high volume
surface mount assembly techniques.
The 4 micron emitter-to-emitter pitch of these transistors
yields high performance products that can perform a
multiplicity of tasks. The 14 emitter nger interdigitated
geometry yields an intermediate-sized transistor with easy
to match to impedances, low noise gure, and moderate
power.
Optimized for best performace from a 5 to 8 volt bias
supply, these transistors are also good performers at 2.7
V. Applications include use in wireless systems as an LNA,
gain stage, buer, oscillator, or active mixer.
An optimum noise match near 50 ohms at 900 MHz makes
thesedevicesparticularlyeasytouseasLNAs.Typicalampli-
er designs at 900 MHz yield 1 dB noise gures with 15 dB
or more associated gain at a 5 V, 5 mA bias, with good gain
and noise gure obtainable at biases as low as 2 mA.
The AT-415 series bipolar transistors are fabricated using
Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process.
The die are nitride passivated for surface protection. Ex-
cellent device uniformity, performance and reliability are
produced by the use of ion-implantation, self-alignment
techniques, and gold metalization in the fabrication of
these devices.
Features
x General Purpose NPN Bipolar Transistor
x 900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB GA
AT-41533: 1 dB NF, 14.5 dB GA
x Characterized for 3, 5, and 8Volt Use
x SOT-23 and SOT-143 SMT Plastic Packages
x Tape-and-Reel Packaging Option Available
x Lead-free
Pin Connections and Package Marking
Notes:
Top View. Package Marking provides orientation and identication.
"x" is the date code.
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
415x
SOT 23 (AT-41533)
SOT 143 (AT-41511)
相关PDF资料 |
PDF描述 |
|---|---|
| AT-41533-TR2G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41533-BLKG | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41511-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41511-TR2G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41533-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-41511-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| AT-41511-TR1 | 功能描述:IC TRANS NPN GP BIPOLAR SOT-143 RoHS:否 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
| AT-41511-TR1G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-41511-TR2G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT4151A | 功能描述:开关配件 .450" WIDE BLK PADDL CAP FOR M & M2T RoHS:否 制造商:C&K Components 类型:Cap 用于:Pushbutton Switches 设计目的: |
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