- 您现在的位置：买卖IC网 > PDF目录48376 > AT-41511-BLKG C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | AT-41511-BLKG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, SMT, 4 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 119K |
| 代理商： | AT-41511-BLKG |
3
Figure 9. AT-41511 and AT-41533 P1dB vs.
Frequency and Bias at VCE = 8 V, with Optimal
Tuning.
Figure 8. AT-41511 and AT-41533 P1dB vs.
Frequency and Bias at VCE = 5 V, with Optimal
Tuning.
Figure 7. AT-41511 and AT-41533 P1dB vs.
Frequency and Bias at VCE = 2.7 V, with Optimal
Tuning.
P
1
dB
(dBm)
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
25 mA
10 mA
5 mA
P
1
dB
(dBm)
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
25 mA
10 mA
5 mA
P
1
dB
(dBm)
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
25 mA
10 mA
5 mA
AT-41511, AT-41533 Typical Performance
Figure 2. AT-41511 and AT-41533 Minimum Noise
Figure vs. Frequency and Current at VCE = 5 V.
Figure 1. AT-41511 and AT-41533 Minimum Noise
Figure vs. Frequency and Current at VCE = 2.7 V.
Figure 3. AT-41511 and AT-41533 Minimum Noise
Figure vs. Frequency and Current at VCE = 8 V.
NOISE
FIGURE
(dB)
0.1
3.0
0
FREQUENCY (GHz)
0.6
2.1
2.6
2.5
1.5
0.5
1.6
2.0
1.0
1.1
25 mA
10 mA
2, 5 mA
NOISE
FIGURE
(dB)
0.1
3.0
0
FREQUENCY (GHz)
0.6
2.1
2.6
2.5
1.5
0.5
1.6
2.0
1.0
1.1
25 mA
10 mA
5 mA
NOISE
FIGURE
(dB)
0.1
3.0
0
FREQUENCY (GHz)
0.6
2.1
2.6
2.5
1.5
0.5
1.6
2.0
1.0
1.1
25 mA
2 mA
10 mA
5 mA
G
a
PKG
11
(dB)
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
20
15
10
G
a
PKG
33
(dB)
PKG 11
PKG 33
25
5
10, 25 mA
2 mA
5 mA
2 mA
5 mA
10, 25 mA
Figure 6. AT-41511 and AT-41533 Associated Gain
vs. Frequency and Current at VCE = 8 V.
Figure 5. AT-41511 and AT-41533 Associated Gain
vs. Frequency and Current at VCE = 5 V.
Figure 4. AT-41511 and AT-41533 Associated Gain
vs. Frequency and Current at VCE = 2.7 V.
G
a
(dB)
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
PKG 11
PKG 33
10, 25 mA
5 mA
10, 25 mA
5 mA
G
a
(dB)
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
PKG 11
PKG 33
10, 25 mA
5 mA
10, 25 mA
5 mA
相关PDF资料 |
PDF描述 |
|---|---|
| AT-41533-TR2G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41533-BLKG | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41511-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41511-TR2G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41533-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-41511-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| AT-41511-TR1 | 功能描述:IC TRANS NPN GP BIPOLAR SOT-143 RoHS:否 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
| AT-41511-TR1G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-41511-TR2G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT4151A | 功能描述:开关配件 .450" WIDE BLK PADDL CAP FOR M & M2T RoHS:否 制造商:C&K Components 类型:Cap 用于:Pushbutton Switches 设计目的: |
发布紧急采购，3分钟左右您将得到回复。