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参数资料
| 型号： | AT-41410 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | HERMETIC SEALED, METAL CERAMIC, MICROSTRIP PACKAGE-4 |
| 文件页数： | 2/5页 |
| 文件大小： | 53K |
| 代理商： | AT-41410 |
4-105
AT-41410 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
60
PT
Power Dissipation [2,3]
mW
500
Tj
Junction Temperature
°C
200
TSTG
Storage Temperature
°C
-65 to 200
Thermal Resistance[2,4]:
θ
jc = 170°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 5.9 mW/
°C for T
C > 115°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
|S21E|
2
Insertion Power Gain; VCE = 8 V, IC = 25 mA
f = 2.0 GHz
dB
12.0
f = 4.0 GHz
6.5
P1 dB
Power Output @ 1 dB Gain Compression
f = 2.0 GHz
dBm
19.0
VCE = 8 V, IC = 25 mA
f= 4.0 GHz
18.5
G1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 25 mA
f = 2.0 GHz
dB
14.0
f = 4.0 GHz
9.5
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 1.0 GHz
dB
1.3
f = 2.0 GHz
1.6
1.9
f = 4.0 GHz
3.0
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 1.0 GHz
dB
18.5
f = 2.0 GHz
13.0
14.0
f = 4.0 GHz
10.0
fT
Gain Bandwidth Product: VCE = 8 V, IC = 25 mA
GHz
8.0
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA
—
30
150
270
ICBO
Collector Cutoff Current; VCB = 8 V
A
0.2
IEBO
Emitter Cutoff Current; VEB = 1 V
A
1.0
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
pF
0.2
Notes:
1. For this test, the emitter is grounded.
相关PDF资料 |
PDF描述 |
|---|---|
| AT-41410 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41411-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41411-TR2 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41411-BLKG | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41411-TR1 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT41411 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50MA I(C) | SOT-143 |
| AT-41411 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Surface Mount Low Noise Silicon Bipolar Transistor Chip |
| AT-41411-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Surface Mount Low Noise Silicon Bipolar Transistor Chip |
| AT-41411-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| AT-41411-TR1 | 制造商:Hewlett Packard Co 功能描述: |
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