参数资料
型号: AT-41410
厂商: AGILENT TECHNOLOGIES INC
元件分类: 小信号晶体管
英文描述: C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: HERMETIC SEALED, METAL CERAMIC, MICROSTRIP PACKAGE-4
文件页数: 3/5页
文件大小: 53K
代理商: AT-41410
4-106
AT-41410 Typical Performance, T
A = 25°C
FREQUENCY (GHz)
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10mA.
GAIN
(dB)
IC (mA)
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
GAIN
(dB)
0
1020
3040
Figure 4. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. VCE = 8 V.
10 V
4 V
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 25 mA.
GAIN
(dB)
0.1
0.5
0.3
1.0
3.0
6.0
IC (mA)
GAIN
(dB)
IC (mA)
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. VCE = 8 V.
24
20
16
12
8
4
G
1
dB
(dB)
P
1
dB
(dBm)
0
1020
3040
P1dB
G1dB
24
21
18
15
12
9
6
3
0
8
6
4
2
0
NF
(dB)
4
3
2
1
NF
O
(dB)
0.5
2.0
1.0
3.0
4.0 5.0
16
15
14
13
12
GA
NFO
GA
NFO
NF50
6 V
0
1020
3040
2.0 GHz
4.0 GHz
6
4
2
0
NF
O
(dB)
16
14
12
10
8
2.0 GHz
4.0 GHz
IC (mA)
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
20
16
11
8
4
0
|S
21E
|2
GAIN
(dB)
0
1020
3040
1.0 GHz
2.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S21E|2
10 V
4 V
6 V
相关PDF资料
PDF描述
AT-41410 C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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相关代理商/技术参数
参数描述
AT41411 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50MA I(C) | SOT-143
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AT-41411-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
AT-41411-TR1 制造商:Hewlett Packard Co 功能描述: