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参数资料
| 型号： | AT-41411-BLK |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-4 |
| 文件页数： | 2/5页 |
| 文件大小： | 66K |
| 代理商： | AT-41411-BLK |
2
AT-41411 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
50
PT
Power Dissipation [2,3]
mW
225
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance [2,4]:
θ
jc = 550
°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE = 25
°C.
3. Derate at 1.8 mW/
°C for T
C > 26
°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, TA = 25
°C
Symbol
Parameters and Test Conditions[1]
Units
Min.
Typ.
Max.
|S21E|
2
Insertion Power Gain; VCE = 8 V, IC = 20 mA
f = 1.0 GHz
dB
14.5
16.5
f = 2.0 GHz
11.0
P1 dB
Power Output @ 1 dB Gain Compression
f = 2.0 GHz
dBm
17.0
VCE = 8 V, IC = 20 mA
G1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 20 mA
f = 2.0 GHz
dB
13.0
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 1.0 GHz
dB
1.4
f = 2.0 GHz
1.8
f = 4.0 GHz
3.5
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 1.0 GHz
dB
18.0
f = 2.0 GHz
13.0
f = 4.0 GHz
9.0
fT
Gain Bandwidth Product: VCE = 8 V, IC = 20 mA
GHz
7.0
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA
—
30
150
270
ICBO
Collector Cutoff Current; VCB = 8 V
A
0.2
IEBO
Emitter Cutoff Current; VEB = 1 V
A
1.0
Notes:
1. Refer to PACKAGING Section, “Tape-and-Reel Packaging for Semiconductor Devices.”
Ordering Information
Part Numbers
No. of Devices
Comments
AT-41411-BLK
100
Bulk
AT-41411-BLKG
100
Bulk
AT-41411-TR1
3000
7" Reel
AT-41411-TR1G
3000
7" Reel
AT-41411-TR2
10000
13" Reel
AT-41411-TR2G
10000
13" Reel
Note:
Order part number with a “G” suffix if lead-free option
is desired.
相关PDF资料 |
PDF描述 |
|---|---|
| AT-41411-BLK | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41411-TR2 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41435G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41435 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41435G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-41411-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| AT-41411-TR1 | 制造商:Hewlett Packard Co 功能描述: |
| AT-41411-TR2G | 制造商:Avago Technologies 功能描述:Transistor,Si,SOT143 |
| AT4142 | 功能描述:开关配件 UB2 GUARD 180 DEG. RoHS:否 制造商:C&K Components 类型:Cap 用于:Pushbutton Switches 设计目的: |
| AT-4142 | 制造商:Nihon Kaiheiki Ind Co Ltd 功能描述: |
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