参数资料
型号: AT-41485
元件分类: 小信号晶体管
英文描述: C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件页数: 1/5页
文件大小: 52K
代理商: AT-41485
4-124
Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
Features
Low Noise Figure:
1.4 dB Typical at 1.0 GHz
1.7 dB Typical at 2.0 GHz
High Associated Gain:
18.5 dB Typical at 1.0 GHz
13.5 dB Typical at 2.0 GHz
High Gain-Bandwidth
Product: 8.0 GHz Typical fT
AT-41485
85 Plastic Package
Description
Hewlett-Packard’s AT-41485 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41485 is housed in a low cost
.085" diameter plastic package.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 14 emitter finger interdigi-
tated geometry yields an interme-
diate sized transistor with imped-
ances that are easy to match for
low noise and moderate power
applications. Applications include
use in wireless systems as an LNA,
gain stage, buffer, oscillator, and
mixer. An optimum noise match
near 50
at 900 MHz, makes this
device easy to use as a low noise
amplifier.
The AT-41485 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
5965-8926E
相关PDF资料
PDF描述
AT-41586-TR2 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-41586-BLK L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-41586-TR1 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-42000-GP4 C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-42010 C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
AT41486 制造商:AGILENT 制造商全称:AGILENT 功能描述:Up to 6 GHz Low Noise Silicon Bipolar Transistor
AT-41486 制造商:AGILENT 制造商全称:AGILENT 功能描述:Up to 6 GHz Low Noise Silicon Bipolar Transistor
AT-41486-BLK 功能描述:TRANS SIL LOW NOISE BIPOLAR 86PL RoHS:否 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿(最大):4.7V 频率 - 转换:47GHz 噪声系数(dB典型值@频率):0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA,3V 电流 - 集电极 (Ic)(最大):45mA 安装类型:表面贴装 封装/外壳:4-SMD,扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR
AT-41486-BLKG 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
AT41486TR1 制造商:HP 功能描述:*