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参数资料
| 型号： | AT-41511-TR1 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SMT, 4 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 103K |
| 代理商： | AT-41511-TR1 |
4-134
General Purpose, Low Noise
NPN Silicon Bipolar Transistor
Technical Data
Features
General Purpose NPN
Bipolar Transistor
900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB GA
AT-41533: 1 dB NF, 14.5 dB GA
Characterized for 3, 5, and
8 Volt Use
SOT-23 and SOT-143 SMT
Plastic Packages
Tape-and-Reel Packaging
Option Available[1]
Description
Hewlett-Packard’s AT-41511 and
AT-41533 are general purpose
NPN bipolar transistors that offer
excellent high frequency
performance at an economical
price. The AT-41533 uses the
3 lead SOT-23, while the AT-415 11
places the same die in the lower
parasitic 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 4 micron emitter-to-emitter
pitch of these transistors yields
high performance products that
can perform a multiplicity of
tasks. The 14 emitter finger
interdigitated geometry yields an
intermediate-sized transistor with
easy to match to impedances, low
noise figure, and moderate
power.
Optimized for best performace
from a 5 to 8 volt bias supply,
these transistors are also good
performers at 2.7 V. Applications
include use in wireless systems as
an LNA, gain stage, buffer,
oscillator, or active mixer.
An optimum noise match near
50 ohms at 900 MHz makes these
devices particularly easy to use as
LNAs. Typical amplifier designs
at 900 MHz yield 1 dB noise
figures with 15 dB or more
associated gain at a 5 V, 5 mA
bias, with good gain and noise
figure obtainable at biases as low
as 2 mA.
The AT-415 series bipolar
transistors are fabricated using
Hewlett-Packard’s 10 GHz fT Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by
the use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
AT-41511
AT-41533
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices.”
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
415
SOT 23 (AT-41533)
SOT 143 (AT-41511)
Outline Drawing
5965-8929E
相关PDF资料 |
PDF描述 |
|---|---|
| AT-41533-TR1G | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41533-BLKG | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41533-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41511-TR1G | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41511-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-41511-TR1G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-41511-TR2G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT4151A | 功能描述:开关配件 .450" WIDE BLK PADDL CAP FOR M & M2T RoHS:否 制造商:C&K Components 类型:Cap 用于:Pushbutton Switches 设计目的: |
| AT4151B | 制造商:NKK Switches 功能描述:PADDLE CAP |
| AT4151C | 功能描述:开关配件 .450" WIDE RED PADDL CAP FOR M & M2T RoHS:否 制造商:C&K Components 类型:Cap 用于:Pushbutton Switches 设计目的: |
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