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| 型号： | AT-41511 |
| 英文描述： | NPN Silicon Bipolar Transistor(NPN硅双极型晶体管) |
| 中文描述： | NPN硅双极型晶体管（npn型硅双极型晶体管） |
| 文件页数： | 2/2页 |
| 文件大小： | 14K |
| 代理商： | AT-41511 |
For technical assistance or the location of
your nearest Hewlett-Packard sales office,
distributor or representative call:
Americas/Canada:
1-800-235-0312 or
408-654-8675
Far E ast/Australasia:
Call your local HP
sales office.
J apan:
(81 3) 3335-8152
E urope:
Call your local HP sales office.
Data subject to change.
Copyright 1997 Hewlett-Packard Co.
Obsoletes 5963-5127E
Printed in U.S.A.
5966-0933E (9/97)
Notes:
1. The point MTTF is simply the total
device hours divided by the number
of failures.
2. This MTTF and failure rate represent the
performance level for which there is a
90% probability of the device doing
better than the stated value. The
confidence level is based on the
statistics of failure distribution. The
assumed distribution is exponential.
This particular distribution is commonly
used in describing useful life failures.
3. FIT is defined as Failure in Time, or
specifically, failures per billion hours.
The relationship between MTTF and
FIT is as follows: FIT = 10
9
/(MTTF)
MIL-STD-750
Reference
Units
Tested
Total
Failed
Test Name
Test Conditions
-65
°
C to 150
°
C, 5 min. dwell,
200 cycles
Thermal Shock
1056
77
0
Temperature Cycle
1051
-65
°
C to 150
°
C, 10 min. dwell,
200 cycles
121
°
C, 15 PSIG, 96 hrs
77
0
AutoClave
HP GSS 12-109
76
0
2. Environmental and Mechanical Tests
3. Flammability Test
(MIL-STD-202, Method 111):
Meets Needle Flame test per UL
Category D (Flaming Time
<3 sec.) under Material
Classification 94VO.
4. DOD-HDBK-1686 ESD
Classification:
AT-41511/41533 Class I
C. Example of Failure Rate Calculation:
At 100
°
C with a device operating 8 hours a day, 5 days a week, the percent utilization is:
% Utilization = (8 hrs/day
×
5 days/wk)
÷
168 hrs/wk
25%
Then the point failure rate per year is:
(25.8
×
10
-9
)
×
(25%)
×
(8760 hrs/yr) = 5.65
×
10
-3
% per year
Likewise, the 90% confidence level failure rate per year is:
(59.4
×
10
-9
)
×
(25%)
×
(8760 hrs/yr) = 1.3
×
10
-2
% per year
400
350
300
250
200
150
100
50
25
T
103
10
4
10
5
MTTF – MEAN TIME TO FAILURE (HRS.)
10
6
10
7
10
9
10
10
4.0
3.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
A
10
8
Ea = 1.1 eV
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-41511-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:General Purpose, Low Noise NPN Silicon Bipolar Transistor |
| AT-41511-BLKG | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-41511-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| AT-41511-TR1 | 功能描述:IC TRANS NPN GP BIPOLAR SOT-143 RoHS:否 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
| AT-41511-TR1G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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