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参数资料
| 型号： | AT-41586-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, 86, 4 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 81K |
| 代理商： | AT-41586-TR1 |
2
AT-41586 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum[1]
V
EBO
Emitter-Base Voltage
V
1.5
V
CBO
Collector-Base Voltage
V
20
V
CEO
Collector-Emitter Voltage
V
12
I
C
Collector Current
mA
60
P
T
Power Dissipation[2]
mW
500
T
j
Junction Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to 150
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. T
CASE = 25°C.
3. See MEASUREMENTS section, “Thermal Resistance,” for more information.
Electrical Specifications, TA = 25°C, VCE = 8 V
Symbol
Parameters and Test Conditions
Unit
Min.
Typ.
Max.
NF
o
Optimum Noise Figure: I
C = 10 mA
f = 1.0 GHz
dB
1.4
f = 2.0 GHz
1.7
f = 4.0 GHz
3.0
G
A
Gain @ NF
0: IC = 10 mA
f = 1.0 GHz
dB
17.0
f = 2.0 GHz
12.5
f = 4.0 GHz
8.0
|S
21E|
2
Insertion Power Gain: I
C = 25 mA
f = 1.0 GHz
dB
17.0
f = 2.0 GHz
11.0
P
1dB
Power Output @ 1 dB Gain Compression: I
C = 25 mA
f = 2.0 GHz
dBm
18.0
G
1dB
1 dB Compressed Gain: I
C = 25 mA
f = 2.0 GHz
dB
13.0
f
T
Gain Bandwidth Product: I
C = 25 mA
GHz
8.0
h
FE
Forward Current Transfer Ratio: I
C = 10 mA
30
150
270
I
CBO
Collector Cutoff Current: V
CB = 8 V
A
0.2
I
EBO
Emitter Cutoff Current: V
EB = 1 V
A
1.0
Thermal Resistance:[3]
θ
jc =165
°C/W
Note:
1. For more information on outlines 86, refer to “Tape and Reel Packaging for Surface Mount Devices.”
10
20
I (mA)
C
10
16
12
14
030
2
4
0
O
NF
(dB)
G
(dB)
A
GA
O
NF
30
12
0
20
8
16
10
20
COLLECTOR CURRENT
40
GAIN
(dB)
4
P1dB
G1dB
18
14
10
6
2
30
10
0
20
5
15
510
I (mA)
C
025
40
4.0 GHz
2.0 GHz
1.0 GHz
|S
|
(dB)
2
21E
Figure 2. AT-41586 Optimum Noise
Figure and Associated Gain vs. Collec-
tor Current at V
CE = 8 V, f = 2.0 GHz.
Figure 3. AT-41586 P
1dB and G1dB vs.
Collector Current at VCE = 8 V,
f = 2.0 GHz.
Figure 4. AT-41586 Insertion Power
Gain vs. Collector Current and
Frequency at 25
°C, V
CE = 8 V.
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