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参数资料
| 型号： | AT-42035G |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, CERAMIC, MICROSTRIP-4 |
| 文件页数： | 1/5页 |
| 文件大小： | 141K |
| 代理商： | AT-42035G |
AT-42035
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Features
HighOutputPower:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
HighGainat1dBCompression:
14.0 dB Typical G1 dB at 2.0 GHz
9.5 dB Typical G1 dB at 4.0 GHz
LowNoiseFigure:
1.9 dB Typical NFO at 2.0 GHz
HighGain-BandwidthProduct:8.0 GHz Typical fT
CostEffectiveCeramicMicrostripPackage
35micro-XPackage
Description
AvagoTechnologies' AT-42035isageneralpurposeNPNbipo-
lartransistorthatoffersexcellenthighfrequencyperformance.
The AT-42035 is housed in a cost effective surface mount 100
mil micro-X package. The 4 micron emitter-to-emitter pitch
enables this transistor to be used in many different functions.
The20emitterfingerinterdigitatedgeometryyieldsamedium
sizedtransistorwithimpedancesthatareeasytomatchforlow
noiseandmediumpowerapplications.Thisdeviceisdesigned
for use in low noise, wideband amplifier, mixer and oscilla-
tor applications in the VHF, UHF, and microwave frequencies.
An optimum noise match near 50 up to 1 GHz, makes this
device easy to use as a low noise amplifier.
The AT-42035 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by the
useofion-implantation,self-alignmenttechniques,andgold
metalization in the fabrication of this device.
相关PDF资料 |
PDF描述 |
|---|---|
| AT-42035 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42035G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42035 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-BLK | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-42035-TR1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42036 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:General purpose transistor |
| AT-42036-BLK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42036-BLKG | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-42036-TR1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
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