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| 型号： | AT-42036-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, MICROSTRIP-4 |
| 文件页数： | 3/6页 |
| 文件大小： | 89K |
| 代理商： | AT-42036-TR1 |
3
AT-42036 Typical Performance, T
A
= 25
°C
FREQUENCY (GHz)
Figure 4. Insertion Power Gain, Maximum
Available Gain and Maximum Stable Gain
vs. Frequency.
VCE = 8 V, IC = 35 mA.
GAIN
(dB)
0.1
0.5
0.3
1.0
3.0
6.0
IC (mA)
Figure 2. Output Power and 1 dB Compressed
Gain vs. Collector Current and Frequency.
VCE = 8 V.
24
20
16
12
8
4
G
1dB
(dB)
P
1dB
(dBm)
010
20
30
40
50
P1dB
G1dB
2.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S21E|2
IC (mA)
Figure 1. Insertion Power Gain vs. Collector
Current and Frequency. VCE = 8 V.
20
16
12
8
4
0
|S
21E
|2
GAIN
(dB)
0
10
20
304050
1.0 GHz
2.0 GHz
4.0 GHz
IC (mA)
Figure 3. Output Power and 1 dB Compressed
Gain vs. Collector Current and Voltage.
f = 2.0 GHz.
10 V
4 V
6 V
4 V
10 V
6 V
24
20
16
12
16
14
12
10
G
1dB
(dB)
P
1dB
(dBm)
0
10
20
304050
P1dB
G1dB
FREQUENCY (GHz)
Figure 5. Noise Figure and Associated Gain vs.
Frequency. VCE = 8 V, IC = 10 mA.
GAIN
(dB)
24
21
18
15
12
9
6
3
0
4
3
2
1
0
NF
O
(dB)
0.5
2.0
1.0
3.0
4.0 5.0
GA
NFO
相关PDF资料 |
PDF描述 |
|---|---|
| AT-42036-BLKG | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-BLK | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-TR1 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42070 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42085 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-42036-TR1G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT42070 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
| AT-42070 | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT42085 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
| AT-42085 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
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