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参数资料
| 型号： | AT-42036-TR1G |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, CERAMIC, MICROSTRIP-4 |
| 文件页数： | 2/6页 |
| 文件大小： | 89K |
| 代理商： | AT-42036-TR1G |
2
AT-42036 Absolute Maximum Ratings[1]
Symbol
Parameter
Units
Absolute Maximum
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
V
CEO
Collector-Emitter Voltage
V
12
I
C
Collector Current
mA
80
PT
Power Dissipation[2,3]
mW
600
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature [4]
°C
-65 to 150
Thermal Resistance[2,5]:
θ
jc = 175°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE = 25
°C.
3. Derate at 5.7 mW/
°C for T
C > 95°C.
4. Storage above +150
°C may tarnish the leads of this package making it difficult to solder into a
circuit.
5. The small spot size of this technique results in a higher, though more accurate determination of
θ
jc
than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more
information.
Electrical Specifications
TA = 25°C
Symbol
Parameters and Test Conditions[1]
Frequency
Units
Min.
Typ.
Max.
|S21E|
2
Insertion Power Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
dB
10.0
11.0
f = 4.0 GHz
5.0
P
1 dB
Power Output @ 1 dB Gain Compression
f = 2.0 GHz
dBm
21.0
VCE = 8 V, IC = 35 mA
f = 4.0 GHz
20.5
G
1 dB
1 dB Compressed Gain; V
CE = 8 V, IC = 35 mA
f = 2.0 GHz
dB
14.0
f = 4.0 GHz
9.5
NF
O
Optimum Noise Figure: V
CE = 8 V, IC = 10 mA
f = 2.0 GHz
dB
2.0
f = 4.0 GHz
3.0
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 2.0 GHz
dB
13.5
f = 4.0 GHz
10.0
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
GHz
8.0
h
FE
Forward Current Transfer Ratio; V
CE = 8 V, IC = 35 mA
—
30
150
270
I
CBO
Collector Cutoff Current; V
CB = 8 V
A
0.2
IEBO
Emitter Cutoff Current; VEB = 1 V
A
2.0
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
pF
0.28
Note:
1. For this test, the emitter is grounded.
相关PDF资料 |
PDF描述 |
|---|---|
| AT-42036-TR1 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-BLKG | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-BLK | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-TR1 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42070 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT42070 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
| AT-42070 | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT42085 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
| AT-42085 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42085G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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