参数资料
型号: AT-42070
厂商: AGILENT TECHNOLOGIES INC
元件分类: 小信号晶体管
英文描述: C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件页数: 1/5页
文件大小: 68K
代理商: AT-42070
Agilent AT-42070
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Data Sheet
Features
High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
High Gain at 1 dB
Compression:
15.0 dB Typical G1 dB at 2.0 GHz
10.0 dB Typical G1 dB at 4.0 GHz
Low Noise Figure:
1.9 dB Typical NFO at 2.0 GHz
High Gain-Bandwidth
Product:
8.0 GHz Typical fT
Hermetic Gold-ceramic
Microstrip Package
70 mil Package
Description
Agilent’s AT-42070 is a general
purpose NPN bipolar transistor that
offers excellent high frequency
performance. The AT-42070 is
housed in a hermetic, high reliabil-
ity gold-ceramic 70 mil microstrip
package. The 4 micron emitter-to-
emitter pitch enables this transistor
to be used in many different
functions. The 20 emitter finger
interdigitated geometry yields a
medium sized transistor with
impedances that are easy to match
for low noise and medium power
applications. This device is
designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near 50
up to 1 GHz, makes this device easy
to use as a low noise amplifier.
The AT-42070 bipolar transistor is
fabricated using Agilent’s 10 GHz
fT Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
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