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参数资料
| 型号： | AT25160BY6-YH-T |
| 厂商： | Atmel |
| 文件页数： | 7/26页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 16KBIT 20MHZ 8DFN |
| 标准包装： | 5,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 16K (2K x 8) |
| 速度： | 5MHz，10MHz，20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-UDFN 裸露焊盘 |
| 供应商设备封装： | 8-MLP（2x3） |
| 包装： | 带卷 (TR) |
AT25080B/160B
4.
Functional Description
The AT25080B/160B is designed to interface directly with the synchronous serial peripheral interface (SPI) of the
6805 and 68HC11 series of microcontrollers.
The AT25080B/160B utilizes an 8-bit instruction register. The list of instructions and their operation codes are con-
tained in Table 3-1 . All instructions, addresses, and data are transferred with the MSB first and start with a high-to-
low CS transition.
Table 4-1.
Instruction Set for the AT25080B/160B
Instruction Name
WREN
WRDI
RDSR
WRSR
READ
WRITE
Instruction Format
0000 X110
0000 X100
0000 X101
0000 X001
0000 X011
0000 X010
Operation
Set Write Enable Latch
Reset Write Enable Latch
Read Status Register
Write Status Register
Read Data from Memory Array
Write Data to Memory Array
WRITE ENABLE (WREN): The device will power up in the write disable state when V CC is applied. All program-
ming instructions must therefore be preceded by a Write Enable instruction.
WRITE DISABLE (WRDI): To protect the device against inadvertent writes, the Write Disable instruction disables
all programming modes. The WRDI instruction is independent of the status of the WP pin.
READ STATUS REGISTER (RDSR): The Read Status Register instruction provides access to the status register.
The READY/BUSY and Write Enable status of the device can be determined by the RDSR instruction. Similarly,
the Block Write Protection Bits indicate the extent of protection employed. These bits are set by using the WRSR
instruction.
Table 4-2.
Status Register Format
Bit 7
WPEN
Bit 6
X
Bit 5
X
Bit 4
X
Bit 3
BP1
Bit 2
BP0
Bit 1
WEN
Bit 0
RDY
Table 4-3.
Bit
Bit 0 (RDY)
Bit 1 (WEN)
Bit 2 (BP0)
Bit 3 (BP1)
Read Status Register Bit Definition
Definition
Bit 0 = “0” (RDY) indicates the device is READY. Bit 0 = “1” indicates the write cycle is in progress
Bit 1= “0” indicates the device is not WRITE ENABLED. Bit 1 = “1” indicates the device is write enabled
See Table 3-4 on page 8
See Table 3-4 on page 8
Bits 4–6 are “0”s when device is not in an internal write cycle
Bit 7 (WPEN)
See Table 3-5 on page 8
Bits 0–7 are “1”s during an internal write cycle
7
5228E–SEEPR–3/12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT25160N-10SA-2.7C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SERIAL EEPROM|2KX8|CMOS|SOP|8PIN|PLASTIC |
| AT25160N-10SA-5.0C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SERIAL EEPROM|2KX8|CMOS|SOP|8PIN|PLASTIC |
| AT25160N-10SC | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:SPI Serial EEPROMs |
| AT25160N-10SC-1.8 | 功能描述:IC EEPROM 16KBIT 3MHZ 8SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT25160N-10SC-2.7 | 功能描述:电可擦除可编程只读存储器 RO 511-M95160-WMN6 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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