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参数资料
| 型号： | AT25HP512W2-10SI-2.7 |
| 厂商： | Atmel |
| 文件页数： | 10/21页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 512KBIT 10MHZ 16SOIC |
| 标准包装： | 46 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 512K (64K x 8) |
| 速度： | 5MHz，10MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC W |
| 包装： | 管件 |
| 其它名称： | AT25HP512W10SI2.7 |
Table 9. WPEN Operation (Continued)
WPEN
1
X
X
WP
Low
High
High
WEN
1
0
1
ProtectedBlocks
Protected
Protected
Protected
UnprotectedBlocks
Writable
Protected
Writable
Status Register
Protected
Protected
Writable
READ SEQUENCE (READ): Reading the AT25HP256/512 via the SO pin requires the
following sequence. After the CS line is pulled low to select a device, the read op-code
is transmitted via the SI line followed by the byte address to be read (see Table 10).
Upon completion, any data on the SI line will be ignored. The data (D7 – D0) at the spec-
ified address is then shifted out onto the SO line. If only one byte is to be read, the CS
line should be driven high after the data comes out. The read sequence can be contin-
ued since the byte address is automatically incremented and data will continue to be
shifted out. When the highest address is reached, the address counter will roll over to
the lowest address allowing the entire memory to be read in one continuous read cycle.
WRITE SEQUENCE (WRITE): In order to program the AT25HP256/512, two separate
instructions must be executed. First, the device must be write enabled via the WREN
instruction. Then a Write instruction may be executed. Also, the address of the memory
location(s) to be programmed must be outside the protected address field location
selected by the block write protection level. During an internal write cycle, all commands
will be ignored except the RDSR instruction.
A Write instruction requires the following sequence. After the CS line is pulled low to
select the device, the Write op-code is transmitted via the SI line followed by the byte
address and the data (D7 – D0) to be programmed (see Table 10). Programming will start
after the CS pin is brought high. The Low-to-High transition of the CS pin must occur
during the SCK low time immediately after clocking in the D0 (LSB) data bit.
The Ready/Busy status of the device can be determined by initiating a Read Status
Register (RDSR) instruction. If Bit 0 = “1”, the write cycle is still in progress. If Bit 0 = “0”,
the write cycle has ended. Only the RDSR instruction is enabled during the write pro-
gramming cycle.
The AT25HP256/512 is capable of a 128-byte page write operation. After each byte of
data is received, the seven low-order address bits are internally incremented by one; the
high-order bits of the address will remain constant. If more than 128 bytes of data are
transmitted, the address counter will roll over and the previously written data will be
overwritten. The AT25HP256/512 is automatically returned to the write disable state at
the completion of a write cycle.
NOTE: If the device is not write enabled (WREN), the device will ignore the Write
instruction and will return to the standby state, when CS is brought high. A new CS fall-
ing edge is required to reinitiate the serial communication.
Table 10. Address Key
Address
A N
Don’t Care Bits
AT25HP256/512
A 14 – A 0 / A 15 – A 0
A 15 / none
NOTE: 128-byte Page Write operation only . Content of the page in the array will not be
guaranteed if less than 128 bytes of data is received (byte write is not supported).
10
AT25HP256/512
1113L–SEEPR–3/06
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT25HP512W2-10SU-1.8 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:SPI Serial EEPROMs |
| AT25HP512W210SU2.7 | 功能描述:IC EEPROM 512KBIT 10MHZ 16SOIC 制造商:microchip technology 系列:- 零件状态:停產 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:512Kb （64K x 8） 时钟频率:10MHz 写周期时间 - 字，页:10ms 存储器接口:SPI 电压 - 电源:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TA） 基本零件编号:AT25HP512 标准包装:3,000 |
| AT25HP512W2-10SU-2.7 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:SPI Serial EEPROMs |
| AT25HV | 功能描述:整流器/与可变电容器 PTFE Dielectric 750V 1.0 to 23.0pF RoHS:否 制造商:Xicon 电容范围:2.8 pF to 12.5 pF 容差: 电压额定值:200 V 工作温度范围:- 35 C to + 85 C 端接类型:SMD/SMT 产品:Trimmer Capacitors - Ceramic Dielectric |
| AT25LHV | 功能描述:整流器/与可变电容器 750Votls 1.0pF-23pF RoHS:否 制造商:Xicon 电容范围:2.8 pF to 12.5 pF 容差: 电压额定值:200 V 工作温度范围:- 35 C to + 85 C 端接类型:SMD/SMT 产品:Trimmer Capacitors - Ceramic Dielectric |
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