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参数资料
| 型号： | AT28BV256-20TI |
| 元件分类： | EEPROM |
| 英文描述： | 128Kx8 EEPROM |
| 中文描述： | 128Kx8 EEPROM |
| 文件页数： | 1/12页 |
| 文件大小： | 285K |
| 代理商： | AT28BV256-20TI |
1
Features
Single 2.7V - 3.6V Supply
Fast Read Access Time – 200 ns
Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum
– 1- to 64-byte Page Write Operation
Low Power Dissipation
– 15 mA Active Current
– 20
A CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 10,000 Cycles
– Data Retention: 10 Years
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28BV256 is a high-performance Electrically Erasable and Programmable Read
Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access
times to 200 ns with power dissipation of just 54 mW. When the device is deselected,
the CMOS standby current is less than 200
A.
256K (32K x 8)
Battery-Voltage
Parallel
EEPROMs
AT28BV256
Rev. 0273G–11/99
Pin Configurations
Pin Name
Function
A0 - A14
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don’t Connect
PDIP, SOIC
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
TSOP
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PLCC
Top View
Note: PLCC package pins 1 and 17
are DON’T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
DC
I/O3
I/O4
I/O5
A7
A12
A14
DC
VCC
WE
A13
(continued)
相关PDF资料 |
PDF描述 |
|---|---|
| AT28BV256-25JC | 128Kx8 EEPROM |
| AT28BV256-25JI | 128Kx8 EEPROM |
| AT28BV256-25PC | 128Kx8 EEPROM |
| AT28BV256-25PI | 128Kx8 EEPROM |
| AT28BV256-25SC | 128Kx8 EEPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28BV256-20TI SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 256K-Bit 32K x 8 3.3V 28-Pin TSOP-I T/R |
| AT28BV256-20TU | 功能描述:电可擦除可编程只读存储器 256K 32K x 8 200 ns 2.7V-3.6V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28BV256-20TU SL235 | 制造商:Atmel Corporation 功能描述: |
| AT28BV256-20TU SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 256K-Bit 32K x 8 3.3V 28-Pin TSOP-I T/R 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 256KBIT 32KX8 3.3V 28TSOP-I - Tape and Reel |
| AT28BV256-20TU-235 | 功能描述:IC EEPROM 256KBIT 200NS 28TSOP 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:256Kb （32K x 8） 写周期时间 - 字，页:10ms 访问时间:200ns 存储器接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:28-TSSOP（0.465"，11.80mm 宽） 供应商器件封装:28-TSOP 标准包装:1 |
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